-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IRFS7430-7PPBF by Infineon Technologies AG
Results Overview of IRFS7430-7PPBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IRFS7430-7PPBF Information
IRFS7430-7PPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFS7430-7PPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IRFS7430-7PPBF-ND
|
DigiKey | MOSFET N-CH 40V 240A D2PAK Lead time: 52 Weeks Container: Tube | Limited Supply - Call |
|
Buy Now | |
|
DISTI #
SP001557480
|
EBV Elektronik | Trans MOSFET NCH 40V 522A 7Pin D2PAK Tube (Alt: SP001557480) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for IRFS7430-7PPBF
IRFS7430-7PPBF CAD Models
IRFS7430-7PPBF Part Data Attributes
|
|
IRFS7430-7PPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRFS7430-7PPBF
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 522 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 175 °C | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 375 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
IRFS7430-7PPBF Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IRFS7430-7PPBF is -40°C to 150°C.
-
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
-
The recommended gate drive voltage for the IRFS7430-7PPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
-
Yes, the IRFS7430-7PPBF can be used in a parallel configuration, but it's essential to ensure proper synchronization and matching of the devices to avoid uneven current sharing.
-
Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor, to protect the device from damage.