Part Details for IRFS4410TRLPBF by International Rectifier
Results Overview of IRFS4410TRLPBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFS4410TRLPBF Information
IRFS4410TRLPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFS4410TRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 514 |
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RFQ |
Part Details for IRFS4410TRLPBF
IRFS4410TRLPBF CAD Models
IRFS4410TRLPBF Part Data Attributes
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IRFS4410TRLPBF
International Rectifier
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Datasheet
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IRFS4410TRLPBF
International Rectifier
Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 380 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS4410TRLPBF
This table gives cross-reference parts and alternative options found for IRFS4410TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS4410TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PSMN009-100B,118 | Nexperia | $1.6800 | N-channel TrenchMOS SiliconMAX standard level FET@en-us D2PAK 3-Pin | IRFS4410TRLPBF vs PSMN009-100B,118 |
| IRFS4410 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRFS4410TRLPBF vs IRFS4410 |
| IRFS4410PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRFS4410TRLPBF vs IRFS4410PBF |
| PSMN009-100B | Nexperia | Check for Price | Power Field-Effect Transistor | IRFS4410TRLPBF vs PSMN009-100B |
| IRFS4410TRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRFS4410TRLPBF vs IRFS4410TRRPBF |
| IRFS4410 | International Rectifier | Check for Price | Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRFS4410TRLPBF vs IRFS4410 |
IRFS4410TRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFS4410TRLPBF is -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
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To ensure reliability, follow the recommended assembly and soldering procedures, use a robust PCB design, and ensure proper thermal management. Additionally, consider using a moisture-sensing coating and conformal coating to protect the device from environmental factors.
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The maximum allowable voltage for the IRFS4410TRLPBF is 100V, but the recommended maximum voltage is 80V to ensure reliable operation.
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Handle the IRFS4410TRLPBF with ESD-protective equipment, such as wrist straps and mats, and ensure that the device is stored in an ESD-protective package. Additionally, consider using ESD-protection diodes or other protection circuits in the design.
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The recommended gate drive voltage for the IRFS4410TRLPBF is 10V to 15V, but the device can operate with gate drive voltages as low as 5V. However, using a higher gate drive voltage can improve switching performance.