Part Details for IRFS4410TRLPBF by Infineon Technologies AG
Results Overview of IRFS4410TRLPBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFS4410TRLPBF Information
IRFS4410TRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFS4410TRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91Y4718
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Newark | Mosfet, N-Ch, 100V, 88A, To-263Ab-3, Transistor Polarity:N Channel, Continuous Drain Current Id:88A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.008Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFS4410TRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 8 |
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$2.7100 / $4.9500 | Buy Now |
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DISTI #
IRFS4410TRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 96A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS4410TRLPBF) RoHS: Compliant Min Qty: 3200 Package Multiple: 800 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
91Y4718
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Avnet Americas | Trans MOSFET N-CH 100V 96A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 91Y4718) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Ammo Pack | 0 |
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$2.5700 / $4.0600 | Buy Now |
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DISTI #
85987333
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Verical | Trans MOSFET N-CH 100V 88A 3-Pin(2+Tab) D2PAK T/R Min Qty: 168 Package Multiple: 1 Date Code: 2301 | Americas - 582 |
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$1.8750 / $2.2375 | Buy Now |
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Rochester Electronics | IRFS4410 - 100V Single N-Channel HEXFET Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 582 |
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$1.5000 / $1.8800 | Buy Now |
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LCSC | 100V 88A 8m10V58A 200W 2V 1 N-channel TO-263-3 MOSFETs ROHS | 16 |
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$2.1766 / $3.3401 | Buy Now |
Part Details for IRFS4410TRLPBF
IRFS4410TRLPBF CAD Models
IRFS4410TRLPBF Part Data Attributes
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IRFS4410TRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS4410TRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 380 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS4410TRLPBF
This table gives cross-reference parts and alternative options found for IRFS4410TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS4410TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFS4410PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRFS4410TRLPBF vs IRFS4410PBF |
| IRFS4410 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRFS4410TRLPBF vs IRFS4410 |
| IRFS4410TRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRFS4410TRLPBF vs IRFS4410TRLPBF |
IRFS4410TRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFS4410TRLPBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended operating conditions.
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The recommended gate drive voltage for the IRFS4410TRLPBF is between 10V and 15V, with a maximum voltage of 20V.
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Yes, the IRFS4410TRLPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
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Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current sense resistor, to prevent damage to the device.