Part Details for IRFS4310PBF by International Rectifier
Results Overview of IRFS4310PBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFS4310PBF Information
IRFS4310PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFS4310PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 23 |
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RFQ |
Part Details for IRFS4310PBF
IRFS4310PBF CAD Models
IRFS4310PBF Part Data Attributes
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IRFS4310PBF
International Rectifier
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Datasheet
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IRFS4310PBF
International Rectifier
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 980 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.007 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 550 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS4310PBF
This table gives cross-reference parts and alternative options found for IRFS4310PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS4310PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRFS4310TRL | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | IRFS4310PBF vs AUIRFS4310TRL |
| IRFS4310TRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRFS4310PBF vs IRFS4310TRLPBF |
IRFS4310PBF Frequently Asked Questions (FAQ)
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The maximum operating junction temperature of the IRFS4310PBF is 175°C, but it's recommended to keep it below 150°C for reliable operation.
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Proper thermal management involves providing a heat sink with a thermal resistance of less than 1°C/W, ensuring good airflow, and keeping the device away from heat sources.
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The recommended gate drive voltage for the IRFS4310PBF is between 10V and 15V, with a maximum of 20V. A higher gate drive voltage can reduce switching losses but may increase gate oxide stress.
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Yes, the IRFS4310PBF is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching losses, gate drive requirements, and thermal management.
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Use a voltage clamp or a zener diode to protect the device from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator or a dedicated overcurrent protection IC.