Part Details for IRFS4127TRLPBF by International Rectifier
Results Overview of IRFS4127TRLPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFS4127TRLPBF Information
IRFS4127TRLPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFS4127TRLPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 166 |
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RFQ | ||
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Vyrian | Transistors | 9741 |
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RFQ |
Part Details for IRFS4127TRLPBF
IRFS4127TRLPBF CAD Models
IRFS4127TRLPBF Part Data Attributes
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IRFS4127TRLPBF
International Rectifier
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Datasheet
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IRFS4127TRLPBF
International Rectifier
Power Field-Effect Transistor, 72A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | D2PAK | |
Package Description | LEAD FREE, D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 72 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 375 W | |
Pulsed Drain Current-Max (IDM) | 300 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
IRFS4127TRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFS4127TRLPBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device. Additionally, the PCB layout should be designed to minimize thermal resistance and ensure good heat dissipation.
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The recommended gate drive voltage for the IRFS4127TRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. However, it's recommended to consult the datasheet for specific gate drive requirements for your application.
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Yes, the IRFS4127TRLPBF is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to ensure optimal performance and minimize electromagnetic interference (EMI).
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To protect the IRFS4127TRLPBF from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.