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Part Details for IRFS38N20DTRLP by Infineon Technologies AG
Results Overview of IRFS38N20DTRLP by Infineon Technologies AG
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFS38N20DTRLP Information
IRFS38N20DTRLP by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFS38N20DTRLP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38AJ3784
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Newark | Mosfet, N-Ch, 200V, 43A, To-263 Rohs Compliant: Yes |Infineon IRFS38N20DTRLP RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 471 |
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$2.1000 / $3.5300 | Buy Now |
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DISTI #
IRFS38N20DTRLPCT-ND
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DigiKey | MOSFET N-CH 200V 43A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1709 In Stock |
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$1.4239 / $3.4000 | Buy Now |
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DISTI #
IRFS38N20DTRLP
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Avnet Americas | Power MOSFET, N Channel, 200 V, 43 A, 0.054 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IRFS38N20DTRLP) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$1.0909 / $1.1668 | Buy Now |
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DISTI #
IRFS38N20DTRLP
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Avnet Americas | Power MOSFET, N Channel, 200 V, 43 A, 0.054 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IRFS38N20DTRLP) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$1.1200 / $1.1781 | Buy Now |
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DISTI #
942-IRFS38N20DTRLP
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Mouser Electronics | MOSFETs MOSFT 200V 44A 54mOhm 60nC RoHS: Compliant | 1176 |
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$1.4200 / $3.3600 | Buy Now |
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DISTI #
E02:0323_00175225
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Arrow Electronics | Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Date Code: 2513 | Europe - 27200 |
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$1.2949 / $1.4216 | Buy Now |
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DISTI #
V36:1790_13891423
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Arrow Electronics | Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Date Code: 2451 | Americas - 2400 |
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$1.2830 / $1.4092 | Buy Now |
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DISTI #
V72:2272_13891423
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Arrow Electronics | Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2235 Container: Cut Strips | Americas - 811 |
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$1.4230 / $2.9970 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.054 Ohm 91 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Container: Reel | 1600Reel |
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$1.2500 / $1.2800 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.054 Ohm 91 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Container: Reel | 0Reel |
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$1.2500 / $1.2800 | Buy Now |
Part Details for IRFS38N20DTRLP
IRFS38N20DTRLP CAD Models
IRFS38N20DTRLP Part Data Attributes
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IRFS38N20DTRLP
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS38N20DTRLP
Infineon Technologies AG
Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | D2PAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 460 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 43 A | |
| Drain-source On Resistance-Max | 0.054 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS38N20DTRLP
This table gives cross-reference parts and alternative options found for IRFS38N20DTRLP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS38N20DTRLP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFS38N20DPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRFS38N20DTRLP vs IRFS38N20DPBF |
| IRFS38N20DTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRFS38N20DTRLP vs IRFS38N20DTRRPBF |
| IRFS38N20D | International Rectifier | Check for Price | Power Field-Effect Transistor, 44A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IRFS38N20DTRLP vs IRFS38N20D |
IRFS38N20DTRLP Frequently Asked Questions (FAQ)
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The maximum junction temperature for the IRFS38N20DTRLP is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) to fill any gaps between the device and the heat sink, and ensure the heat sink is properly mounted and secured.
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The recommended gate drive voltage for the IRFS38N20DTRLP is between 10V and 15V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements, as excessive gate voltage can damage the device.
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Yes, the IRFS38N20DTRLP is suitable for high-frequency switching applications. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure the device is properly driven and cooled to prevent overheating and excessive losses.
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To protect the IRFS38N20DTRLP from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in your design. Additionally, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.