Part Details for IRFS250B by Fairchild Semiconductor Corporation
Results Overview of IRFS250B by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFS250B Information
IRFS250B by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFS250B
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 21.3A, 200V, 0.085ohm, N-Channel Power MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 232 |
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$0.5897 / $0.9511 | Buy Now |
Part Details for IRFS250B
IRFS250B CAD Models
IRFS250B Part Data Attributes
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IRFS250B
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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IRFS250B
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 21.3A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-3PF | |
| Package Description | TO-3PF, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 600 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 21.3 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 90 W | |
| Pulsed Drain Current-Max (IDM) | 85 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS250B
This table gives cross-reference parts and alternative options found for IRFS250B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS250B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFS250B | Rochester Electronics LLC | Check for Price | 21.3A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN | IRFS250B vs IRFS250B |
IRFS250B Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFS250B is not explicitly stated in the datasheet, but it can be determined by consulting the Fairchild Semiconductor application note AN-936, which provides guidelines for calculating the SOA for power MOSFETs.
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The junction-to-case thermal resistance (RθJC) for the IRFS250B can be calculated using the thermal resistance values provided in the datasheet. The RθJC is typically around 0.5°C/W for the IRFS250B, but it can vary depending on the specific application and cooling conditions.
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The recommended gate drive voltage for the IRFS250B is typically between 10V to 15V, but it can vary depending on the specific application and switching frequency. A higher gate drive voltage can improve the switching performance, but it also increases the power consumption and EMI.
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To prevent shoot-through current in a half-bridge configuration using the IRFS250B, it is recommended to use a dead-time control circuit to ensure that the high-side and low-side MOSFETs are not turned on simultaneously. Additionally, the gate drive voltage and switching frequency should be optimized to minimize the overlap time between the two MOSFETs.
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The maximum allowed drain-source voltage (VDS) for the IRFS250B during startup and shutdown is typically around 200V, but it can vary depending on the specific application and circuit configuration. It is recommended to use a soft-start circuit or a voltage ramp-up circuit to limit the VDS during startup and shutdown.