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Transistors / Power Field-Effect Transistors / IRFR9024
Datasheets
IRFR9024 by:

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, D-PAK-3

Part Details for IRFR9024 by Vishay Intertechnologies

Results Overview of IRFR9024 by Vishay Intertechnologies

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IRFR9024 Information

IRFR9024 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFR9024

Part # Distributor Description Stock Price Buy
DISTI # IRFR9024
Avnet Americas MOSFET P-CHANNEL 60V - Bulk (Alt: IRFR9024) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Bulk 0
RFQ
Bristol Electronics   5
RFQ
Quest Components TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,8.8A I(D),TO-252AA 4
  • 1 $1.2500
  • 5 $1.0000
$1.0000 / $1.2500 Buy Now

Part Details for IRFR9024

IRFR9024 CAD Models

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IRFR9024 Part Data Attributes

Parametric Data
IRFR9024 Vishay Intertechnologies
Buy Now Datasheet
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IRFR9024 Vishay Intertechnologies Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, D-PAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-252AA
Package Description D-PAK-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 300 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8.8 A
Drain-source On Resistance-Max 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 35 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR9024

This table gives cross-reference parts and alternative options found for IRFR9024. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9024, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFR9024TRPBF Vishay Intertechnologies $1.1032 Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, IRFR9024 vs IRFR9024TRPBF
IRFR9024TRR International Rectifier Check for Price Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA IRFR9024 vs IRFR9024TRR
IRFR9024 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 9.9A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 IRFR9024 vs IRFR9024
IRFR9024TR Vishay Siliconix Check for Price Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 IRFR9024 vs IRFR9024TR
IRFR9024TRRPBF Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 IRFR9024 vs IRFR9024TRRPBF
Part Number Manufacturer Composite Price Description Compare
SIHFR9024TR-GE3 Vishay Siliconix Check for Price TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power IRFR9024 vs SIHFR9024TR-GE3
IRFR9024TRL International Rectifier Check for Price Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA IRFR9024 vs IRFR9024TRL
IRFR9024 Vishay Siliconix Check for Price Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 IRFR9024 vs IRFR9024
IRFR9024 International Rectifier Check for Price Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 IRFR9024 vs IRFR9024
IRFR9024TRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, IRFR9024 vs IRFR9024TRRPBF
IRFR9024TRLPBF Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, IRFR9024 vs IRFR9024TRLPBF
SIHFR9024TL Vishay Siliconix Check for Price TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power IRFR9024 vs SIHFR9024TL
IRFR9024TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, IRFR9024 vs IRFR9024TRPBF
IRFR9024PBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 IRFR9024 vs IRFR9024PBF
IRFR9024TR International Rectifier Check for Price Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA IRFR9024 vs IRFR9024TR

IRFR9024 Related Parts

IRFR9024 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFR9024 is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power handling at higher temperatures to ensure reliable operation.

  • To ensure proper biasing, make sure to provide a stable voltage supply to the gate (Vgs) and ensure the drain-source voltage (Vds) is within the recommended range. A gate-source voltage (Vgs) of 10-15V is typically recommended for optimal performance.

  • For optimal thermal management, it's recommended to use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Ensure good thermal conductivity by using thermal vias and a heat sink if necessary. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance.

  • Yes, the IRFR9024 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize ringing and oscillations.

  • To protect the IRFR9024 from overvoltage and overcurrent conditions, use a voltage clamp or a zener diode to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent excessive current flow.

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