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Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
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IRFR320TRPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79AH3181
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Newark | Mosfet N-Channel 400V Rohs Compliant: No |Vishay IRFR320TRPBF RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 2000 |
|
$0.7170 | Buy Now |
DISTI #
97W2283
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Newark | Mosfet Transistor, N Channel, 3.1 A, 400 V, 1.8 Ohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRFR320TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.7760 / $1.2100 | Buy Now |
DISTI #
IRFR320TRPBF
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Avnet Americas | Power MOSFET, N Channel, 400 V, 3.1 A, 1.8 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IRFR320TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks, 0 Days Container: Reel | 2000 |
|
$0.3469 / $0.3924 | Buy Now |
DISTI #
97W2283
|
Avnet Americas | Power MOSFET, N Channel, 400 V, 3.1 A, 1.8 ohm, TO-252 (DPAK), Surface Mount - Bulk (Alt: 97W2283) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Bulk | 0 |
|
$0.8260 / $1.4100 | Buy Now |
DISTI #
844-IRFR320TRPBF
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Mouser Electronics | MOSFETs TO252 400V 3.1A N-CH MOSFET RoHS: Compliant | 10996 |
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$0.4240 / $1.0000 | Buy Now |
DISTI #
E02:0323_00194160
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Arrow Electronics | Trans MOSFET N-CH 400V 3.1A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks Date Code: 2507 | Europe - 24000 |
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$0.4010 / $0.5372 | Buy Now |
DISTI #
V72:2272_07435359
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Arrow Electronics | Trans MOSFET N-CH 400V 3.1A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2242 Container: Cut Strips | Americas - 1292 |
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$0.4138 / $0.6527 | Buy Now |
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Future Electronics | Single N-Channel 400 V 1.8 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 6000Reel |
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$0.4000 / $0.4150 | Buy Now |
DISTI #
88210566
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Verical | Trans MOSFET N-CH 400V 3.1A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2507 | Americas - 24000 |
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$0.3982 / $0.5335 | Buy Now |
DISTI #
71240468
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Verical | Trans MOSFET N-CH 400V 3.1A 3-Pin(2+Tab) DPAK T/R Min Qty: 71 Package Multiple: 1 Date Code: 2329 | Americas - 10000 |
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$0.4790 / $0.5620 | Buy Now |
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IRFR320TRPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR320TRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-252AA | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 160 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 3.1 A | |
Drain-source On Resistance-Max | 1.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR320TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR320TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
SIHFR320TRL-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | IRFR320TRPBF vs SIHFR320TRL-GE3 |
The maximum operating temperature range for the IRFR320TRPBF is -55°C to 175°C.
Yes, the IRFR320TRPBF is a fast-switching MOSFET with a rise time of 10ns and a fall time of 12ns.
The maximum drain-source voltage rating for the IRFR320TRPBF is 320V.
Yes, the IRFR320TRPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
The typical gate threshold voltage for the IRFR320TRPBF is 3.5V.