Datasheets
IRFR13N15D by:
International Rectifier

Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

Part Details for IRFR13N15D by International Rectifier

Results Overview of IRFR13N15D by International Rectifier

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IRFR13N15D Information

IRFR13N15D by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFR13N15D

Part # Distributor Description Stock Price Buy
Quest Components 14 A, 150 V, 0.18 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA 60
  • 1 $1.2000
  • 5 $1.0000
  • 16 $0.7200
$0.7200 / $1.2000 Buy Now
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 112
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRFR13N15D

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IRFR13N15D Part Data Attributes

IRFR13N15D International Rectifier
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IRFR13N15D International Rectifier Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-252AA
Package Description PLASTIC, DPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 130 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 86 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR13N15D

This table gives cross-reference parts and alternative options found for IRFR13N15D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR13N15D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFR13N15DTRRP International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRFR13N15D vs IRFR13N15DTRRP
IRFR13N15DTRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRFR13N15D vs IRFR13N15DTRPBF
IRFR13N15D Infineon Technologies AG Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 IRFR13N15D vs IRFR13N15D
Part Number Manufacturer Composite Price Description Compare
IRFR13N15DTRPBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRFR13N15D vs IRFR13N15DTRPBF
IRFR13N15DTRLP International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRFR13N15D vs IRFR13N15DTRLP
IRFR13N15DPBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRFR13N15D vs IRFR13N15DPBF
IRFR13N15DTRR International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 IRFR13N15D vs IRFR13N15DTRR
IRFR13N15DTR International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 IRFR13N15D vs IRFR13N15DTR
PSMN063-150D,118 NXP Semiconductors Check for Price PSMN063-150D - N-channel TrenchMOS SiliconMAX standard level FET DPAK 3-Pin IRFR13N15D vs PSMN063-150D,118
PSMN063-150D NXP Semiconductors Check for Price TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3, FET General Purpose Power IRFR13N15D vs PSMN063-150D
PSMN063-150D/T3 Nexperia Check for Price Power Field-Effect Transistor IRFR13N15D vs PSMN063-150D/T3
934055758118 Nexperia Check for Price Power Field-Effect Transistor IRFR13N15D vs 934055758118
934055758118 NXP Semiconductors Check for Price TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3, FET General Purpose Power IRFR13N15D vs 934055758118

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