Datasheets
IRFR1018ETRPBF by:

Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

Part Details for IRFR1018ETRPBF by International Rectifier

Results Overview of IRFR1018ETRPBF by International Rectifier

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

IRFR1018ETRPBF Information

IRFR1018ETRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFR1018ETRPBF

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 56A I(D), 60V, 0.0084OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA 30
  • 1 $1.1025
  • 6 $0.9188
  • 17 $0.6615
$0.6615 / $1.1025 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 56A I(D), 60V, 0.0084OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA 1
  • 1 $2.1168
$2.1168 Buy Now
Vyrian Transistors 8009
RFQ

Part Details for IRFR1018ETRPBF

IRFR1018ETRPBF CAD Models

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IRFR1018ETRPBF Part Data Attributes

IRFR1018ETRPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRFR1018ETRPBF International Rectifier Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-252AA
Package Description LEAD FREE, DPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 88 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 56 A
Drain-source On Resistance-Max 0.0084 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 315 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR1018ETRPBF

This table gives cross-reference parts and alternative options found for IRFR1018ETRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR1018ETRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFR1018EPBF International Rectifier Check for Price Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 IRFR1018ETRPBF vs IRFR1018EPBF
Part Number Manufacturer Composite Price Description Compare
IRFR1018ETRPBF Infineon Technologies AG $1.0854 Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 IRFR1018ETRPBF vs IRFR1018ETRPBF
AUIRFR1018E International Rectifier Check for Price Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 IRFR1018ETRPBF vs AUIRFR1018E
AUIRFR1018ETRR International Rectifier Check for Price Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 IRFR1018ETRPBF vs AUIRFR1018ETRR
IRFR1018ETRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 IRFR1018ETRPBF vs IRFR1018ETRLPBF
IRFR1018ETRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 IRFR1018ETRPBF vs IRFR1018ETRRPBF
AUIRFR1018ETRR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 IRFR1018ETRPBF vs AUIRFR1018ETRR
IRFR1018EPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 IRFR1018ETRPBF vs IRFR1018EPBF
AUIRFR1018ETRL International Rectifier Check for Price Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 IRFR1018ETRPBF vs AUIRFR1018ETRL

IRFR1018ETRPBF Related Parts

IRFR1018ETRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFR1018ETRPBF is -55°C to 175°C.

  • Yes, the IRFR1018ETRPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

  • The maximum current rating for the IRFR1018ETRPBF is 23A, but this is dependent on the operating conditions and the PCB design.

  • Yes, the IRFR1018ETRPBF is suitable for high-frequency switching applications up to 1MHz, thanks to its low gate charge and fast switching times.

  • The typical gate threshold voltage for the IRFR1018ETRPBF is around 2.5V, but this can vary depending on the specific device and operating conditions.

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