Datasheets
IRFPE50PBF by:

Power Field-Effect Transistor, 7.8A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3

Part Details for IRFPE50PBF by Vishay Siliconix

Results Overview of IRFPE50PBF by Vishay Siliconix

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IRFPE50PBF Information

IRFPE50PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFPE50PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFPE50PBF-ND
DigiKey MOSFET N-CH 800V 7.8A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube 471
In Stock
  • 1 $4.5700
  • 100 $3.9385
  • 500 $3.3750
$3.3750 / $4.5700 Buy Now
DISTI # 70459480
RS IRFPE50PBF N-channel MOSFET Transistor, 7.8 A, 800 V, 3-Pin TO-247AC Min Qty: 500 Package Multiple: 1 Container: Bulk 0
  • 500 $6.4000
  • 2,500 $6.0800
  • 5,000 $5.7600
  • 10,000 $5.4400
$5.4400 / $6.4000 RFQ

Part Details for IRFPE50PBF

IRFPE50PBF CAD Models

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IRFPE50PBF Part Data Attributes

IRFPE50PBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFPE50PBF Vishay Siliconix Power Field-Effect Transistor, 7.8A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-247
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 770 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 7.8 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 31 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFPE50PBF

This table gives cross-reference parts and alternative options found for IRFPE50PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPE50PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFPE50 Vishay Siliconix Check for Price Power Field-Effect Transistor, 7.8A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN IRFPE50PBF vs IRFPE50
IRFPE50PBF Vishay Intertechnologies $2.7318 Power Field-Effect Transistor, 7.8A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3 PIN IRFPE50PBF vs IRFPE50PBF
Part Number Manufacturer Composite Price Description Compare
IRFPE50 International Rectifier Check for Price Power Field-Effect Transistor, 7.8A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC IRFPE50PBF vs IRFPE50

IRFPE50PBF Related Parts

IRFPE50PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFPE50PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management practices, such as using a heat sink, and ensure the device is operated within its specified voltage and current ratings.

  • The recommended gate drive voltage for the IRFPE50PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRFPE50PBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure proper gate drive and layout to minimize switching losses.

  • Use a voltage regulator or overvoltage protection circuit to prevent voltage spikes, and consider adding overcurrent protection devices such as fuses or current sensors to prevent damage from excessive current.

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