Part Details for IRFPE40 by International Rectifier
Results Overview of IRFPE40 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFPE40 Information
IRFPE40 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFPE40
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5.4A I(D),TO-247AC | 24 |
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$3.0000 / $6.0000 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 49 |
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$2.5000 / $3.8500 | Buy Now |
Part Details for IRFPE40
IRFPE40 CAD Models
IRFPE40 Part Data Attributes
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IRFPE40
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFPE40
International Rectifier
Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 490 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 5.4 A | |
Drain-source On Resistance-Max | 2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 225 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 150 W | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFPE40
This table gives cross-reference parts and alternative options found for IRFPE40. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPE40, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IRFPE40PBF | Vishay Intertechnologies | $2.2274 | Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN | IRFPE40 vs IRFPE40PBF |
IRFPE40 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFPE40 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, the SOA is typically limited by the device's maximum voltage rating, maximum current rating, and thermal limitations. It's recommended to consult with the manufacturer or a qualified engineer to determine the specific SOA for a given application.
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The thermal resistance of the IRFPE40 can be calculated using the device's thermal impedance (Zth) and the maximum junction temperature (Tjmax). The thermal impedance is typically provided in the datasheet, and the maximum junction temperature is usually specified as 150°C or 175°C. The thermal resistance (Rth) can be calculated using the formula: Rth = Zth * (Tjmax - Tamb), where Tamb is the ambient temperature.
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The recommended gate drive voltage for the IRFPE40 is typically between 10V and 15V, depending on the specific application and the desired switching speed. A higher gate drive voltage can result in faster switching times, but it also increases the risk of gate oxide damage. It's recommended to consult with the manufacturer or a qualified engineer to determine the optimal gate drive voltage for a given application.
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The IRFPE40 is a power MOSFET designed for high-power applications, but it may not be suitable for high-frequency switching applications due to its relatively high gate capacitance and switching losses. The device's switching frequency is limited by its gate charge, drain-source capacitance, and thermal limitations. It's recommended to consult with the manufacturer or a qualified engineer to determine the feasibility of using the IRFPE40 in a high-frequency switching application.
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To ensure the reliability of the IRFPE40 in a high-temperature environment, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device's maximum junction temperature should not be exceeded, and the device should be operated within its recommended voltage and current ratings. It's also recommended to consult with the manufacturer or a qualified engineer to determine the specific reliability requirements for a given application.