Datasheets
IRFPE40 by:

Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Details for IRFPE40 by International Rectifier

Results Overview of IRFPE40 by International Rectifier

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IRFPE40 Information

IRFPE40 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFPE40

Part # Distributor Description Stock Price Buy
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5.4A I(D),TO-247AC 24
  • 1 $6.0000
  • 3 $4.0000
  • 7 $3.0000
$3.0000 / $6.0000 Buy Now
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 216
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 49
  • 1 $3.8500
  • 100 $2.8800
  • 1,000 $2.5000
$2.5000 / $3.8500 Buy Now

Part Details for IRFPE40

IRFPE40 CAD Models

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IRFPE40 Part Data Attributes

IRFPE40 International Rectifier
Buy Now Datasheet
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IRFPE40 International Rectifier Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 490 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 5.4 A
Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFPE40

This table gives cross-reference parts and alternative options found for IRFPE40. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPE40, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFPE40PBF Vishay Intertechnologies $2.2274 Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN IRFPE40 vs IRFPE40PBF
Part Number Manufacturer Composite Price Description Compare
BUZ356 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 IRFPE40 vs BUZ356
BUK438-800B NXP Semiconductors Check for Price TRANSISTOR 6.6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power IRFPE40 vs BUK438-800B
STW7NA80 STMicroelectronics Check for Price 6.5A, 800V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN IRFPE40 vs STW7NA80
IRFPE40PBF International Rectifier Check for Price Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN IRFPE40 vs IRFPE40PBF
BUZ356 Siemens Check for Price Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 IRFPE40 vs BUZ356
IRFPE40 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, IRFPE40 vs IRFPE40

IRFPE40 Related Parts

IRFPE40 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRFPE40 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, the SOA is typically limited by the device's maximum voltage rating, maximum current rating, and thermal limitations. It's recommended to consult with the manufacturer or a qualified engineer to determine the specific SOA for a given application.

  • The thermal resistance of the IRFPE40 can be calculated using the device's thermal impedance (Zth) and the maximum junction temperature (Tjmax). The thermal impedance is typically provided in the datasheet, and the maximum junction temperature is usually specified as 150°C or 175°C. The thermal resistance (Rth) can be calculated using the formula: Rth = Zth * (Tjmax - Tamb), where Tamb is the ambient temperature.

  • The recommended gate drive voltage for the IRFPE40 is typically between 10V and 15V, depending on the specific application and the desired switching speed. A higher gate drive voltage can result in faster switching times, but it also increases the risk of gate oxide damage. It's recommended to consult with the manufacturer or a qualified engineer to determine the optimal gate drive voltage for a given application.

  • The IRFPE40 is a power MOSFET designed for high-power applications, but it may not be suitable for high-frequency switching applications due to its relatively high gate capacitance and switching losses. The device's switching frequency is limited by its gate charge, drain-source capacitance, and thermal limitations. It's recommended to consult with the manufacturer or a qualified engineer to determine the feasibility of using the IRFPE40 in a high-frequency switching application.

  • To ensure the reliability of the IRFPE40 in a high-temperature environment, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device's maximum junction temperature should not be exceeded, and the device should be operated within its recommended voltage and current ratings. It's also recommended to consult with the manufacturer or a qualified engineer to determine the specific reliability requirements for a given application.

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