Datasheets
IRFPC60PBF by:

Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3

Part Details for IRFPC60PBF by Vishay Siliconix

Results Overview of IRFPC60PBF by Vishay Siliconix

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IRFPC60PBF Information

IRFPC60PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFPC60PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFPC60PBF-ND
DigiKey MOSFET N-CH 600V 16A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube 294
In Stock
  • 1 $5.5900
  • 25 $4.2836
$4.2836 / $5.5900 Buy Now

Part Details for IRFPC60PBF

IRFPC60PBF CAD Models

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IRFPC60PBF Part Data Attributes

IRFPC60PBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFPC60PBF Vishay Siliconix Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-247
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 64 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFPC60PBF

This table gives cross-reference parts and alternative options found for IRFPC60PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPC60PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFPC60 International Rectifier Check for Price Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC IRFPC60PBF vs IRFPC60
Part Number Manufacturer Composite Price Description Compare
STW16NA60 STMicroelectronics Check for Price 16A, 600V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 IRFPC60PBF vs STW16NA60
IRFPC60LC International Rectifier Check for Price Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC IRFPC60PBF vs IRFPC60LC
SSH17N60 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 17A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IRFPC60PBF vs SSH17N60
IRFPC60 Vishay Siliconix Check for Price Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN IRFPC60PBF vs IRFPC60
2SK3355 Renesas Electronics Corporation Check for Price 83A, 60V, 0.0088ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN IRFPC60PBF vs 2SK3355
FS4KM-12 Mitsubishi Electric Check for Price Power Field-Effect Transistor, 4A I(D), 600V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRFPC60PBF vs FS4KM-12
2SK3355-AZ Renesas Electronics Corporation Check for Price Nch Single Power Mosfet 60V 83A 5.8Mohm Mp-25/To-220Ab, MP-25, /Bag IRFPC60PBF vs 2SK3355-AZ
FS4KM-12 Powerex Power Semiconductors Check for Price Power Field-Effect Transistor, 4A I(D), 600V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN IRFPC60PBF vs FS4KM-12
2SK3355 NEC Electronics Group Check for Price Power Field-Effect Transistor, 83A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN IRFPC60PBF vs 2SK3355

IRFPC60PBF Related Parts

IRFPC60PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFPC60PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management practices, such as using a heat sink, and ensure the device is operated within its specified voltage and current ratings.

  • The recommended gate drive voltage for the IRFPC60PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRFPC60PBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure proper gate drive and layout to minimize switching losses.

  • Use a voltage regulator or overvoltage protection circuit to prevent voltage spikes, and consider adding overcurrent protection devices such as fuses or current sensors to prevent damage from excessive current.

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