Part Details for IRFPC60PBF by Vishay Siliconix
Results Overview of IRFPC60PBF by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFPC60PBF Information
IRFPC60PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFPC60PBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFPC60PBF-ND
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DigiKey | MOSFET N-CH 600V 16A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
294 In Stock |
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$4.2836 / $5.5900 | Buy Now |
Part Details for IRFPC60PBF
IRFPC60PBF CAD Models
IRFPC60PBF Part Data Attributes
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IRFPC60PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFPC60PBF
Vishay Siliconix
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | TO-247 | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1000 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 64 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFPC60PBF
This table gives cross-reference parts and alternative options found for IRFPC60PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPC60PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRFPC60 | International Rectifier | Check for Price | Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | IRFPC60PBF vs IRFPC60 |
IRFPC60PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFPC60PBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management practices, such as using a heat sink, and ensure the device is operated within its specified voltage and current ratings.
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The recommended gate drive voltage for the IRFPC60PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRFPC60PBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure proper gate drive and layout to minimize switching losses.
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Use a voltage regulator or overvoltage protection circuit to prevent voltage spikes, and consider adding overcurrent protection devices such as fuses or current sensors to prevent damage from excessive current.