Part Details for IRFP4668PBF by International Rectifier
Results Overview of IRFP4668PBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFP4668PBF Information
IRFP4668PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP4668PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 100 |
|
RFQ | ||
|
|
Bristol Electronics | 92 |
|
RFQ | ||
|
|
Quest Components | 130A, 200V, 0.0097OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AC | 80 |
|
$5.8136 / $9.4275 | Buy Now |
|
|
Vyrian | Transistors | 4589 |
|
RFQ |
Part Details for IRFP4668PBF
IRFP4668PBF CAD Models
IRFP4668PBF Part Data Attributes
|
|
IRFP4668PBF
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRFP4668PBF
International Rectifier
Power Field-Effect Transistor, 130A I(D), 200V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-247AC | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 760 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 130 A | |
| Drain-source On Resistance-Max | 0.0097 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 520 W | |
| Pulsed Drain Current-Max (IDM) | 520 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFP4668PBF Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IRFP4668PBF is -55°C to 175°C.
-
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
-
The maximum current rating for the IRFP4668PBF is 130A. However, this rating is dependent on the case temperature and the duration of the current pulse.
-
To protect the IRFP4668PBF from overvoltage, use a voltage clamp or a transient voltage suppressor (TVS) diode to limit the voltage to the maximum rated voltage of 200V.
-
The recommended gate drive voltage for the IRFP4668PBF is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.