Part Details for IRFP460BPBF by Vishay Siliconix
Results Overview of IRFP460BPBF by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFP460BPBF Information
IRFP460BPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP460BPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 500V, 0.25OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC | 3 |
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Part Details for IRFP460BPBF
IRFP460BPBF CAD Models
IRFP460BPBF Part Data Attributes
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IRFP460BPBF
Vishay Siliconix
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Datasheet
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IRFP460BPBF
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Category CO2 Kg | 8.8 | |
| EU RoHS Version | RoHS 2 (2015/863/EU) | |
| Candidate List Date | 2015-12-17 | |
| EFUP | e | |
| Conflict Mineral Status | DRC Conflict Free | |
| Conflict Mineral Status Source | CMRT V6.31 | |
| Avalanche Energy Rating (Eas) | 281 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 62 A | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP460BPBF
This table gives cross-reference parts and alternative options found for IRFP460BPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP460BPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFP460BPBF | Vishay Intertechnologies | $2.2933 | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | IRFP460BPBF vs IRFP460BPBF |
| IRFP460NPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN | IRFP460BPBF vs IRFP460NPBF |
| IRFP460N | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | IRFP460BPBF vs IRFP460N |
IRFP460BPBF Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFP460BPBF is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and the user should ensure that the device operates within the recommended temperature range.
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To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is low (typically <10 ohms). Also, use a gate driver with a high current capability to quickly charge and discharge the gate capacitance. Additionally, consider using a gate resistor to slow down the turn-on and turn-off transitions to reduce electromagnetic interference (EMI).
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For optimal thermal performance, ensure that the IRFP460BPBF is mounted on a thermally conductive PCB material (e.g., FR4 or IMS) with a large copper area for heat dissipation. Use a thermal interface material (TIM) between the device and the heat sink, and ensure good thermal contact between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductances and capacitances.
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Use a voltage clamp or a transient voltage suppressor (TVS) to protect the IRFP460BPBF from overvoltage conditions. For overcurrent protection, consider using a current sense resistor and a comparator or an overcurrent protection IC. Additionally, ensure that the device is operated within its recommended voltage and current ratings, and consider using a fuse or a circuit breaker to disconnect the power supply in case of a fault.
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A typical gate drive circuit for the IRFP460BPBF consists of a gate driver IC, a gate resistor, and a bootstrap capacitor. For protection, consider using a gate-source zener diode to protect against gate-source overvoltage, and a drain-source zener diode to protect against drain-source overvoltage. Additionally, use a freewheeling diode to protect against back-EMF and reduce electromagnetic interference (EMI).