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Part Details for IRFP460 by STMicroelectronics
Results Overview of IRFP460 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFP460 Information
IRFP460 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP460
| Part # | Distributor | Description | Stock | Price | Buy | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 7800 |
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$4.0000 / $6.1500 | Buy Now |
Part Details for IRFP460
IRFP460 CAD Models
IRFP460 Part Data Attributes
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IRFP460
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
IRFP460
STMicroelectronics
18.4A, 500V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-247AC | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 960 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 18.4 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 280 W | |
| Pulsed Drain Current-Max (IDM) | 73.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP460
This table gives cross-reference parts and alternative options found for IRFP460. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP460, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFP460 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | IRFP460 vs IRFP460 |
| IRFP460 | Philips Semiconductors | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRFP460 vs IRFP460 |
| IRFP460 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IRFP460 vs IRFP460 |
IRFP460 Frequently Asked Questions (FAQ)
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The maximum SOA for the IRFP460 is typically defined by the manufacturer as the region where the device can operate safely without damage. For the IRFP460, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id). The SOA can be found in the datasheet or application notes.
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Proper thermal management is crucial for the IRFP460. Ensure good thermal contact between the device and a heat sink, and use thermal interface materials (TIMs) to minimize thermal resistance. Also, consider the maximum junction temperature (Tj) rating of 175°C and ensure the device is operated within the recommended temperature range.
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The recommended gate drive voltage for the IRFP460 is typically between 10V to 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
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To protect the IRFP460 from overvoltage and overcurrent, consider using voltage clamping devices such as zener diodes or transient voltage suppressors (TVS) to limit voltage spikes. Additionally, use current sensing and overcurrent protection (OCP) circuits to prevent excessive current flow.
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For optimal performance and reliability, follow good PCB layout and routing practices for the IRFP460. Keep the drain and source pins as close as possible to minimize inductance, and use a solid ground plane to reduce electromagnetic interference (EMI). Consult the datasheet and application notes for more information.