Part Details for IRFP460 by IXYS Corporation
Results Overview of IRFP460 by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFP460 Information
IRFP460 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP460
| Part # | Distributor | Description | Stock | Price | Buy | |
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Onlinecomponents.com | RoHS: Compliant |
5 In Stock |
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$5.9800 / $25.4600 | Buy Now |
Part Details for IRFP460
IRFP460 CAD Models
IRFP460 Part Data Attributes
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IRFP460
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IRFP460
IXYS Corporation
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247AD, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Mentor OK | true | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 280 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP460
This table gives cross-reference parts and alternative options found for IRFP460. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP460, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFP460 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | IRFP460 vs IRFP460 |
| IRFP460 | Philips Semiconductors | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRFP460 vs IRFP460 |
IRFP460 Frequently Asked Questions (FAQ)
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The maximum SOA for the IRFP460 is typically defined by the manufacturer as a graph of drain-source voltage (Vds) vs. drain current (Id) at a given temperature. It's essential to ensure the device operates within this area to prevent damage or degradation.
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The RθJC can be calculated using the formula: RθJC = (Tj - Tc) / Pd, where Tj is the junction temperature, Tc is the case temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values, but you may need to calculate it based on your specific application.
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The recommended gate drive voltage for the IRFP460 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase the risk of gate oxide damage.
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To ensure proper cooling, consider the device's thermal resistance, power dissipation, and ambient temperature. Use a heat sink with a suitable thermal interface material, and ensure good airflow around the device. You may also need to consider thermal simulation and modeling to optimize your design.
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The IRFP460 has an internal ESD protection diode, but it's still essential to follow proper ESD handling and storage procedures to prevent damage. Use ESD-safe materials, grounding straps, and follow proper assembly and handling techniques to minimize the risk of ESD damage.