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Power Field-Effect Transistor, 171A I(D), 150V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
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IRFP4568PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45P6114
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Newark | Mosfet, N-Ch, 150V, 171A, 175Deg C, 517W, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:171A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:30V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Infineon IRFP4568PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2 |
|
$3.4500 | Buy Now |
DISTI #
IRFP4568PBF-ND
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DigiKey | MOSFET N-CH 150V 171A TO247AC Min Qty: 1 Lead time: 12 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
DISTI #
IRFP4568PBF
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Avnet Americas | Trans MOSFET N-CH 150V 171A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP4568PBF) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$1.9992 | Buy Now |
DISTI #
45P6114
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Avnet Americas | Trans MOSFET N-CH 150V 171A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 45P6114) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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$5.2600 / $8.9900 | Buy Now |
DISTI #
70017925
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RS | MOSFET, N Ch., 150V, 171A, 5.9 MOHM, 151 NC QG, TO-247AC, Pb-Free Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$6.5700 / $7.7300 | RFQ |
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Future Electronics | Single N-Channel 150 V 5.9 mOhm 151 nC HEXFET® Power Mosfet - TO-247-3AC RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Lead time: 12 Weeks Container: Tube | 600Tube |
|
$2.0400 / $2.1700 | Buy Now |
|
Future Electronics | Single N-Channel 150 V 5.9 mOhm 151 nC HEXFET® Power Mosfet - TO-247-3AC RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Container: Tube | 316Tube |
|
$2.0400 / $2.2100 | Buy Now |
|
Future Electronics | Single N-Channel 150 V 5.9 mOhm 151 nC HEXFET® Power Mosfet - TO-247-3AC RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 25 Lead time: 12 Weeks Container: Tube | 0Tube |
|
$2.0800 / $2.2000 | Buy Now |
DISTI #
69263783
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Verical | Trans MOSFET N-CH Si 150V 171A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 10 Package Multiple: 1 Date Code: 2239 | Americas - 6721 |
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$3.0400 / $6.5500 | Buy Now |
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Future Electronics | Single N-Channel 150 V 5.9 mOhm 151 nC HEXFET� Power Mosfet - TO-247-3AC Min Qty: 1 Package Multiple: 1 |
316 null |
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$2.0400 / $2.2100 | Buy Now |
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IRFP4568PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFP4568PBF
Infineon Technologies AG
Power Field-Effect Transistor, 171A I(D), 150V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 763 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 171 A | |
Drain-source On Resistance-Max | 0.0059 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 517 W | |
Pulsed Drain Current-Max (IDM) | 684 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the IRFP4568PBF is -55°C to 175°C.
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
The recommended gate drive voltage for the IRFP4568PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
Yes, the IRFP4568PBF is suitable for switching applications due to its low RDS(on) and high current capability. However, ensure proper gate drive and layout to minimize switching losses.
Use a suitable voltage regulator and overvoltage protection circuit, and consider adding overcurrent protection devices such as fuses or current sensors to prevent damage to the device.