Part Details for IRFP360 by International Rectifier
Results Overview of IRFP360 by International Rectifier
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFP360 Information
IRFP360 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP360
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1185 |
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RFQ | ||
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Bristol Electronics | 1 |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 400V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC | 839 |
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$0.4600 / $1.1500 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 400V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC | 222 |
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$1.7160 / $3.9600 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 400V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC | 1 |
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$11.7000 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for IRFP360
IRFP360 CAD Models
IRFP360 Part Data Attributes
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IRFP360
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFP360
International Rectifier
Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 1200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 23 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 280 W | |
| Power Dissipation-Max (Abs) | 280 W | |
| Pulsed Drain Current-Max (IDM) | 92 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP360
This table gives cross-reference parts and alternative options found for IRFP360. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP360, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRFP360PBF | Vishay Intertechnologies | $3.6419 | Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT PACKAGE-3 | IRFP360 vs IRFP360PBF |
| IRFP360 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IRFP360 vs IRFP360 |
| IRFP360PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | IRFP360 vs IRFP360PBF |
IRFP360 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFP360 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to limit the device's operation to within 80% of its maximum voltage and current ratings to ensure reliable operation.
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To calculate the thermal resistance of the IRFP360 in a specific application, you need to consider the device's junction-to-case thermal resistance (RθJC), case-to-sink thermal resistance (RθCS), and sink-to-ambient thermal resistance (RθSA). The total thermal resistance (RθJA) can be calculated using the formula: RθJA = RθJC + RθCS + RθSA. You can find the RθJC value in the datasheet, and the other values depend on the specific application and heat sink design.
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The recommended gate drive voltage for the IRFP360 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce the device's switching losses, but it also increases the risk of gate oxide damage. It's essential to ensure that the gate drive voltage is within the recommended range to ensure reliable operation.
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To prevent shoot-through current in a half-bridge configuration using the IRFP360, it's essential to ensure that the gate drive signals are properly synchronized and have sufficient dead time between the high-side and low-side switches. You can also use a gate drive IC with built-in shoot-through protection or implement a dead time generator circuit to prevent simultaneous conduction of both switches.
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The maximum allowed dv/dt for the IRFP360 is not explicitly stated in the datasheet, but it's typically recommended to limit the dv/dt to 10V/ns or less to prevent voltage-induced turn-on and ensure reliable operation. You can use a gate resistor and a snubber network to slow down the dv/dt and reduce the risk of voltage-induced turn-on.