Part Details for IRFP350 by Vishay Siliconix
Results Overview of IRFP350 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFP350 Information
IRFP350 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP350
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 25 |
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RFQ | ||
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Bristol Electronics | 5 |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 20 |
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$4.0000 / $6.0000 | Buy Now |
Part Details for IRFP350
IRFP350 CAD Models
IRFP350 Part Data Attributes
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IRFP350
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFP350
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-247 | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 16 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for IRFP350
This table gives cross-reference parts and alternative options found for IRFP350. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP350, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRFP350PBF | Vishay Intertechnologies | $3.2148 | Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3 PIN | IRFP350 vs IRFP350PBF |
| IRFP350 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | IRFP350 vs IRFP350 |
| IRFP350 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | IRFP350 vs IRFP350 |
| IRFP350 | STMicroelectronics | Check for Price | 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | IRFP350 vs IRFP350 |
| IRFP350PBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | IRFP350 vs IRFP350PBF |
| IRFP350 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IRFP350 vs IRFP350 |
| IRFP350 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-3P, 3 PIN | IRFP350 vs IRFP350 |
| IRFP350 | Intersil Corporation | Check for Price | 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | IRFP350 vs IRFP350 |
IRFP350 Frequently Asked Questions (FAQ)
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The SOA for the IRFP350 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. A safe operating area can be determined by plotting the device's voltage and current ratings against the thermal resistance and maximum junction temperature.
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To ensure the IRFP350 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive current should be sufficient to charge the gate capacitance quickly. A gate driver with a high current capability and a low output impedance is recommended.
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The maximum dv/dt rating for the IRFP350 is not explicitly stated in the datasheet, but it can be estimated based on the device's internal gate resistance and capacitance. A general rule of thumb is to limit dv/dt to 1000V/μs or less to prevent spurious turn-on.
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The IRFP350 is not optimized for high-frequency switching applications due to its relatively high gate capacitance and internal gate resistance. However, it can be used in switching applications up to 100kHz with proper gate drive and layout techniques.
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Thermal management is critical for the IRFP350. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material with a low thermal resistance. The heat sink should be designed to dissipate the maximum expected power loss, and the device's thermal resistance should be taken into account.