Part Details for IRFP350 by Vishay Intertechnologies
Results Overview of IRFP350 by Vishay Intertechnologies
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFP350 Information
IRFP350 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFP350
IRFP350 CAD Models
IRFP350 Part Data Attributes
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IRFP350
Vishay Intertechnologies
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Datasheet
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IRFP350
Vishay Intertechnologies
Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-247AC | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 390 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP350
This table gives cross-reference parts and alternative options found for IRFP350. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP350, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRFP350 | STMicroelectronics | Check for Price | 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | IRFP350 vs IRFP350 |
IRFP350 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFP350 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's operation to a maximum of 50% of its maximum rated voltage and current to ensure reliable operation.
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The thermal resistance of the IRFP350 can be calculated using the device's thermal resistance values provided in the datasheet (e.g., RθJC, RθJA) and the application's specific thermal environment. A thermal simulation or modeling tool can be used to estimate the device's junction temperature and thermal resistance in the specific application.
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The recommended gate drive voltage for the IRFP350 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce the device's switching losses, but may also increase the risk of gate oxide damage.
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Yes, the IRFP350 can be used in high-frequency switching applications, but the device's switching losses and thermal performance must be carefully considered. The device's datasheet provides information on its switching characteristics and thermal performance, which can be used to estimate its suitability for high-frequency applications.
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To ensure the IRFP350 is properly biased and configured for linear operation, the device's gate-source voltage (VGS) should be set to a value that provides the desired level of conduction, and the drain-source voltage (VDS) should be limited to prevent the device from entering saturation. The device's datasheet provides information on its linear operation characteristics and recommended biasing conditions.