Datasheets
IRFP350 by:

16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

Part Details for IRFP350 by Rochester Electronics LLC

Results Overview of IRFP350 by Rochester Electronics LLC

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IRFP350 Information

IRFP350 by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRFP350

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IRFP350 Part Data Attributes

IRFP350 Rochester Electronics LLC
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IRFP350 Rochester Electronics LLC 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 64 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFP350

This table gives cross-reference parts and alternative options found for IRFP350. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP350, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFP353 Harris Semiconductor Check for Price Power Field-Effect Transistor, 14A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 IRFP350 vs IRFP353
BUZ325 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 IRFP350 vs BUZ325
Part Number Manufacturer Composite Price Description Compare
IRFP341 International Rectifier Check for Price Power Field-Effect Transistor, 11A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC IRFP350 vs IRFP341
MTW16N40E Rochester Electronics LLC Check for Price 16A, 400V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN IRFP350 vs MTW16N40E
IRFP341 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IRFP350 vs IRFP341
SSH22N35 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 22A I(D), 350V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IRFP350 vs SSH22N35
BUZ325 Rochester Electronics LLC Check for Price 12.5A, 400V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 IRFP350 vs BUZ325
MTW16N40E onsemi Check for Price 16A, 400V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN IRFP350 vs MTW16N40E
BUZ325 Siemens Check for Price Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 IRFP350 vs BUZ325
MTW16N40E Motorola Mobility LLC Check for Price 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE IRFP350 vs MTW16N40E
BUZ323 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA IRFP350 vs BUZ323
BUZ323 Siemens Check for Price Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 IRFP350 vs BUZ323

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