Part Details for IRFP350 by Harris Semiconductor
Results Overview of IRFP350 by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFP350 Information
IRFP350 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP350
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 120 |
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RFQ | ||
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Rochester Electronics | 16A, 400V, 0.3 OHM, N-Channel POWER MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 25 |
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$2.3900 / $2.9900 | Buy Now |
Part Details for IRFP350
IRFP350 CAD Models
IRFP350 Part Data Attributes
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IRFP350
Harris Semiconductor
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Datasheet
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IRFP350
Harris Semiconductor
Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 180 W | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 181 ns | |
| Turn-on Time-Max (ton) | 95 ns |
IRFP350 Frequently Asked Questions (FAQ)
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The SOA for the IRFP350 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. A safe operating area can be determined by plotting the device's voltage and current ratings against the thermal resistance and maximum junction temperature.
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To ensure the IRFP350 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive current should be sufficient to charge the gate capacitance quickly. A gate driver with a high current capability and a low output impedance is recommended.
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The maximum dv/dt rating for the IRFP350 is not explicitly stated in the datasheet, but it can be estimated based on the device's internal capacitance and the maximum voltage rating. A general rule of thumb is to limit dv/dt to 1000 V/μs or less to prevent voltage oscillations and ensure reliable operation.
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The IRFP350 is not optimized for high-frequency switching applications due to its relatively high gate capacitance and internal resistance. However, it can be used in switching applications up to 100 kHz or less with proper gate drive and layout techniques to minimize switching losses and ringing.
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The IRFP350 is sensitive to ESD damage, so proper handling and storage procedures should be followed. Use an ESD wrist strap or mat, and ensure that the device is stored in an anti-static package or bag. During PCB assembly, use ESD-protected tools and follow proper soldering techniques to prevent ESD damage.