-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IRFP3415PBF by Infineon Technologies AG
Results Overview of IRFP3415PBF by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
IRFP3415PBF Information
IRFP3415PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP3415PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
64AH3709
|
Newark | Mosfet, N-Ch, 150V, 43A, 175Deg C, 200W, Transistor Polarity:N Channel, Continuous Drain Current Id:43A, Drain Source Voltage Vds:150V, On Resistance Rds(On):0.042Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFP3415PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
DISTI #
IRFP3415PBF
|
Avnet Americas | Trans MOSFET N-CH 150V 43A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP3415PBF) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 111 Weeks, 0 Days Container: Tube | 0 |
|
$1.1513 / $1.2316 | Buy Now |
|
DISTI #
E02:0323_00175335
|
Arrow Electronics | Trans MOSFET N-CH Si 150V 43A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 400 Package Multiple: 25 Lead time: 10 Weeks Date Code: 2506 | Europe - 2050 |
|
$1.5159 | Buy Now |
|
DISTI #
V36:1790_13892453
|
Arrow Electronics | Trans MOSFET N-CH Si 150V 43A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 400 Package Multiple: 400 Lead time: 98 Weeks Date Code: 2410 | Americas - 85 |
|
$1.4930 | Buy Now |
|
DISTI #
V99:2348_13892453
|
Arrow Electronics | Trans MOSFET N-CH Si 150V 43A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 1 Package Multiple: 1 Lead time: 98 Weeks Date Code: 2211 | Americas - 1 |
|
$0.4491 / $1.2933 | Buy Now |
|
DISTI #
87740484
|
Verical | Trans MOSFET N-CH Si 150V 43A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 400 Package Multiple: 400 Date Code: 2506 | Americas - 2000 |
|
$1.5089 | Buy Now |
|
DISTI #
87707682
|
Verical | Trans MOSFET N-CH Si 150V 43A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 199 Package Multiple: 1 Date Code: 2201 | Americas - 1661 |
|
$1.5875 / $1.8875 | Buy Now |
|
DISTI #
71239739
|
Verical | Trans MOSFET N-CH Si 150V 43A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 20 Package Multiple: 1 Date Code: 2333 | Americas - 390 |
|
$1.3300 / $1.3400 | Buy Now |
|
|
Rochester Electronics | IRFP3415 - 150V Single N-Channel HEXFET Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 1723 |
|
$1.2700 / $1.5900 | Buy Now |
|
DISTI #
IRFP3415PBF
|
TME | Transistor: N-MOSFET, unipolar, 150V, 43A, 200W, TO247AC Min Qty: 1 | 31 |
|
$1.3500 / $2.4200 | Buy Now |
Part Details for IRFP3415PBF
IRFP3415PBF CAD Models
IRFP3415PBF Part Data Attributes
|
|
IRFP3415PBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRFP3415PBF
Infineon Technologies AG
Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 590 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 43 A | |
| Drain-source On Resistance-Max | 0.042 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFP3415PBF Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IRFP3415PBF is -55°C to 175°C.
-
To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
-
The recommended gate drive voltage for the IRFP3415PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
-
Yes, the IRFP3415PBF is suitable for high-frequency switching applications up to 100 kHz, but ensure proper gate drive and layout to minimize switching losses.
-
Use a suitable overvoltage protection circuit, such as a zener diode or a transient voltage suppressor, and implement overcurrent protection using a current sense resistor and a comparator.