Part Details for IRFP260NPBF by International Rectifier
Results Overview of IRFP260NPBF by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFP260NPBF Information
IRFP260NPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP260NPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 129 |
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RFQ | ||
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Bristol Electronics | 100 |
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Quest Components | 20 A, 200 V, 0.18 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AC | 80 |
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$1.7820 / $3.2400 | Buy Now |
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Quest Components | 20 A, 200 V, 0.18 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AC | 4 |
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$3.5625 / $4.2750 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 1495 |
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RFQ | |
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Vyrian | Transistors | 5943 |
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RFQ |
Part Details for IRFP260NPBF
IRFP260NPBF CAD Models
IRFP260NPBF Part Data Attributes
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IRFP260NPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFP260NPBF
International Rectifier
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-247AC | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 560 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP260NPBF
This table gives cross-reference parts and alternative options found for IRFP260NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP260NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFP260NPBF | Infineon Technologies AG | $2.5418 | Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | IRFP260NPBF vs IRFP260NPBF |
| IRFP260N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | IRFP260NPBF vs IRFP260N |
| IRFP260NHR | International Rectifier | Check for Price | Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, PLASTIC PACKAGE-3 | IRFP260NPBF vs IRFP260NHR |
IRFP260NPBF Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFP260NPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or application notes. For the IRFP260NPBF, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id).
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To ensure proper thermal management of the IRFP260NPBF, it's essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by applying a thermal interface material (TIM) to the device, using a heat sink with a high thermal conductivity, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRFP260NPBF is typically between 10V to 15V, depending on the specific application and required switching speed. A higher gate drive voltage can result in faster switching times, but may also increase power consumption and electromagnetic interference (EMI).
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To protect the IRFP260NPBF from electrostatic discharge (ESD), it's essential to handle the device by the body or use an anti-static wrist strap or mat. The device should also be stored in an anti-static bag or tube, and all equipment and tools used during assembly should be grounded.
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The maximum allowed drain-source voltage (Vds) for the IRFP260NPBF is 200V. Exceeding this voltage can result in device damage or failure.