Part Details for IRFP260MPBF by International Rectifier
Results Overview of IRFP260MPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFP260MPBF Information
IRFP260MPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP260MPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | IR MOSFET Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Vyrian | Transistors | 2994 |
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RFQ |
Part Details for IRFP260MPBF
IRFP260MPBF CAD Models
IRFP260MPBF Part Data Attributes
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IRFP260MPBF
International Rectifier
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Datasheet
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IRFP260MPBF
International Rectifier
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-247AC | |
Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 560 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.04 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
IRFP260MPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFP260MPBF is -55°C to 175°C.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
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The maximum voltage rating for the IRFP260MPBF is 500V.
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Use a voltage regulator or a voltage clamp to prevent overvoltage. Implement overcurrent protection using a fuse or a current-sensing resistor with a comparator.
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The recommended gate drive voltage for the IRFP260MPBF is between 10V and 15V.