Part Details for IRFP254 by Harris Semiconductor
Results Overview of IRFP254 by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFP254 Information
IRFP254 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP254
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,23A I(D),TO-247AC | 1 |
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$6.0000 | Buy Now |
Part Details for IRFP254
IRFP254 CAD Models
IRFP254 Part Data Attributes
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IRFP254
Harris Semiconductor
Buy Now
Datasheet
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IRFP254
Harris Semiconductor
Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 23 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 180 W | |
| Power Dissipation-Max (Abs) | 190 W | |
| Pulsed Drain Current-Max (IDM) | 92 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 208 ns | |
| Turn-on Time-Max (ton) | 159 ns |
Alternate Parts for IRFP254
This table gives cross-reference parts and alternative options found for IRFP254. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP254, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFP254PBF | Vishay Intertechnologies | $2.0666 | Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | IRFP254 vs IRFP254PBF |
| IRFP254 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | IRFP254 vs IRFP254 |
| IRFP254 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IRFP254 vs IRFP254 |
| IRFP254 | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | IRFP254 vs IRFP254 |
| IRFP254 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IRFP254 vs IRFP254 |
| IRFP254PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | IRFP254 vs IRFP254PBF |