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Part Details for IRFP250MPBF by Infineon Technologies AG
Results Overview of IRFP250MPBF by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFP250MPBF Information
IRFP250MPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP250MPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91Y4707
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Newark | Mosfet, N-Ch, 200V, 30A, 175Deg C, 214W, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:30A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFP250MPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 9170 |
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$1.4400 / $3.2400 | Buy Now |
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DISTI #
IRFP250MPBF-ND
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DigiKey | MOSFET N-CH 200V 30A TO247AC Min Qty: 1 Lead time: 8 Weeks Container: Tube |
2739 In Stock |
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$0.9423 / $2.8400 | Buy Now |
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DISTI #
91Y4707
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Avnet Americas | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 91Y4707) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 27 Partner Stock |
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$0.8100 / $1.9800 | Buy Now |
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DISTI #
IRFP250MPBF
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Avnet Americas | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP250MPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 400 Lead time: 8 Weeks, 0 Days Container: Tube | 0 |
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$0.7104 / $0.7779 | Buy Now |
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DISTI #
942-IRFP250MPBF
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Mouser Electronics | MOSFETs MOSFT 200V 30A 75mOhm 82nCAC RoHS: Compliant | 3353 |
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$0.9480 / $2.7800 | Buy Now |
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DISTI #
E02:0323_00821669
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Arrow Electronics | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AD Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2436 | Europe - 328 |
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$0.9015 / $2.7256 | Buy Now |
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DISTI #
70019715
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RS | IRFP250MPBF N-channel MOSFET Transistor, 30 A, 200 V, 3-Pin TO-247AC Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$3.6000 / $4.2200 | RFQ |
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DISTI #
84439579
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Verical | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AD Tube RoHS: Compliant Min Qty: 8 Package Multiple: 1 Date Code: 2436 | Americas - 328 |
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$0.9052 / $2.7366 | Buy Now |
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DISTI #
IRFP250MPBF
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TME | Transistor: N-MOSFET, unipolar, 200V, 30A, 214W, TO247AD Min Qty: 1 | 244 |
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$0.9200 / $2.1400 | Buy Now |
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DISTI #
SP001566168
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EBV Elektronik | Trans MOSFET NCH 200V 30A 3Pin3Tab TO247AC (Alt: SP001566168) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 9 Weeks, 0 Days | EBV - 800 |
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Buy Now |
Part Details for IRFP250MPBF
IRFP250MPBF CAD Models
IRFP250MPBF Part Data Attributes
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IRFP250MPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFP250MPBF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 315 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 214 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFP250MPBF Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFP250MPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or application notes. For the IRFP250MPBF, the SOA is typically limited by the maximum voltage, current, and power dissipation ratings.
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To ensure proper thermal management of the IRFP250MPBF, it's essential to provide a suitable heat sink, ensure good thermal interface material (TIM) between the device and heat sink, and maintain a low thermal resistance path. Additionally, consider the maximum junction temperature (Tj) rating of 175°C and ensure the device is operated within the recommended temperature range.
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For optimal performance and reliability, it's recommended to follow good PCB design practices, such as using a multi-layer board, keeping high-current paths short and wide, and minimizing inductance. Additionally, ensure proper decoupling, and consider the device's pinout and thermal pad when designing the PCB.
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To protect the IRFP250MPBF from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure the PCB and assembly process follow ESD-safe practices. Additionally, consider using ESD protection devices, such as TVS diodes, in the circuit design.
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The reliability and lifespan of the IRFP250MPBF depend on various factors, including operating conditions, temperature, and quality of the device. Infineon provides reliability data and guidelines in the datasheet and application notes. Typically, the device can operate for millions of hours under normal operating conditions.