Part Details for IRFP250 by International Rectifier
Results Overview of IRFP250 by International Rectifier
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFP250 Information
IRFP250 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP250
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 15 |
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RFQ | ||
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Bristol Electronics | 12 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,30A I(D),TO-247AC | 162 |
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$1.9500 / $4.5000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,30A I(D),TO-247AC | 77 |
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$3.0000 / $4.5000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,30A I(D),TO-247AC | 32 |
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$3.0000 / $4.5000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,30A I(D),TO-247AC | 9 |
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$2.7940 / $3.8100 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,30A I(D),TO-247AC | 1 |
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$5.3127 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for IRFP250
IRFP250 CAD Models
IRFP250 Part Data Attributes
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IRFP250
International Rectifier
Buy Now
Datasheet
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IRFP250
International Rectifier
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 410 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 190 W | |
| Power Dissipation-Max (Abs) | 190 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFP250 Frequently Asked Questions (FAQ)
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The maximum SOA for the IRFP250 is typically defined by the voltage and current ratings, but it's also dependent on the application and operating conditions. A general guideline is to ensure that the device operates within the boundaries of the maximum voltage, current, and power dissipation ratings.
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Proper thermal management is crucial for the IRFP250. Ensure good thermal contact between the device and a heat sink, and consider using thermal interface materials. Also, follow the recommended PCB layout and thermal design guidelines to minimize thermal resistance.
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The recommended gate drive voltage for the IRFP250 is typically between 10V to 15V, depending on the application and required switching speed. However, it's essential to ensure the gate drive voltage is within the recommended range to avoid damage or malfunction.
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Yes, the IRFP250 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application is within the device's recommended operating frequency range.
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To protect the IRFP250 from overvoltage and overcurrent conditions, consider using voltage clamping devices, such as zener diodes or transient voltage suppressors, and overcurrent protection devices, such as fuses or current sensors.