Part Details for IRFP22N50A by Vishay Siliconix
Results Overview of IRFP22N50A by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFP22N50A Information
IRFP22N50A by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP22N50A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,22A I(D),TO-247AC | 2 |
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$4.5000 / $6.7500 | Buy Now |
Part Details for IRFP22N50A
IRFP22N50A CAD Models
IRFP22N50A Part Data Attributes
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IRFP22N50A
Vishay Siliconix
Buy Now
Datasheet
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IRFP22N50A
Vishay Siliconix
Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, PLASTIC PACKAGE-3
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | PLASTIC PACKAGE-3 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 1180 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.23 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 88 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFP22N50A Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFP22N50A is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
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To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal paste or thermal tape, and ensuring good contact between the device and the heat sink or PCB. Additionally, the heat sink or PCB should be designed to dissipate heat efficiently.
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The recommended gate drive voltage for the IRFP22N50A is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce switching losses and improve the device's overall performance.
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Yes, the IRFP22N50A can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuit is capable of providing a fast and clean switching signal. Additionally, the PCB layout and design should be optimized to minimize parasitic inductances and capacitances.
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To protect the IRFP22N50A from overvoltage and overcurrent conditions, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse or a current limiter can be used to detect and respond to overcurrent conditions.