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Part Details for IRFP150NPBF by Infineon Technologies AG
Results Overview of IRFP150NPBF by Infineon Technologies AG
- Distributor Offerings: (31 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFP150NPBF Information
IRFP150NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP150NPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J6848
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Newark | N Channel Mosfet, 100V, 42A, To-247Ac, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:42A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFP150NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1922 |
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$1.4000 / $2.8700 | Buy Now |
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DISTI #
26AC0519
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Newark | Planar_Mosfets Rohs Compliant: Yes |Infineon IRFP150NPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.2800 / $1.3800 | Buy Now |
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DISTI #
IRFP150NPBF-ND
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DigiKey | MOSFET N-CH 100V 42A TO247AC Min Qty: 1 Lead time: 8 Weeks Container: Tube |
3157 In Stock |
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$1.0695 / $2.5900 | Buy Now |
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DISTI #
IRFP150NPBF
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Avnet Americas | Power MOSFET, General Purpose, N Channel, 100 V, 42 A, 0.036 ohm, TO-247AC, Through Hole - Rail/Tube (Alt: IRFP150NPBF) RoHS: Compliant Min Qty: 25 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Tube | 200 |
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RFQ | |
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DISTI #
63J6848
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Avnet Americas | Power MOSFET, General Purpose, N Channel, 100 V, 42 A, 0.036 ohm, TO-247AC, Through Hole - Bulk (Alt: 63J6848) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 1922 Partner Stock |
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$1.3400 / $2.9500 | Buy Now |
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DISTI #
942-IRFP150NPBF
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Mouser Electronics | MOSFETs MOSFT 100V 39A 36mOhm 73.3nCAC RoHS: Compliant | 7456 |
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$1.0000 / $2.5000 | Buy Now |
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DISTI #
E02:0323_00011016
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Arrow Electronics | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2514 | Europe - 7185 |
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$0.8172 / $1.5225 | Buy Now |
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DISTI #
V36:1790_13892421
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Arrow Electronics | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 400 Package Multiple: 400 Lead time: 8 Weeks Date Code: 2131 | Americas - 2435 |
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$0.9743 / $1.0248 | Buy Now |
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DISTI #
V99:2348_13892421
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Arrow Electronics | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2146 | Americas - 147 |
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$0.8733 / $1.4864 | Buy Now |
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DISTI #
70017034
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.036Ohm, ID 42A, TO-247AC, PD 160W, VGS +/-20V Min Qty: 1 Package Multiple: 1 Container: Bulk | 100 |
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$2.3500 | Buy Now |
Part Details for IRFP150NPBF
IRFP150NPBF CAD Models
IRFP150NPBF Part Data Attributes
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IRFP150NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFP150NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFP150NPBF Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFP150NPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or application notes. For the IRFP150NPBF, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id).
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To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or thermal tape, and ensuring good contact between the device and the heat sink. Additionally, the PCB design should allow for good airflow and heat dissipation.
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The recommended gate drive voltage for the IRFP150NPBF is typically between 10V to 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
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To protect the IRFP150NPBF from electrostatic discharge (ESD), it's essential to handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and storing the device in an ESD-safe environment. Additionally, the PCB design should include ESD protection components, such as TVS diodes or ESD protection arrays.
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The maximum allowed drain-source voltage (Vds) for the IRFP150NPBF is 150V. Exceeding this voltage can damage the device.