Part Details for IRFP064PBF by Vishay Siliconix
Results Overview of IRFP064PBF by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFP064PBF Information
IRFP064PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP064PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFP064PBF-ND
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DigiKey | MOSFET N-CH 60V 70A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
67 In Stock |
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$3.3750 / $4.8800 | Buy Now |
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New Advantage Corporation | Single N-Channel 60 V 0.009 Ohms Flange Mount Power Mosfet - TO-247 RoHS: Compliant Min Qty: 1 Package Multiple: 25 | 500 |
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$2.5400 | Buy Now |
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Vyrian | Transistors | 841 |
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RFQ |
Part Details for IRFP064PBF
IRFP064PBF CAD Models
IRFP064PBF Part Data Attributes
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IRFP064PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFP064PBF
Vishay Siliconix
Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-247 | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 520 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP064PBF
This table gives cross-reference parts and alternative options found for IRFP064PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP064PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HUF75339G3 | Rochester Electronics LLC | Check for Price | 70A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | IRFP064PBF vs HUF75339G3 |
| HUF75344G3 | Rochester Electronics LLC | Check for Price | 75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | IRFP064PBF vs HUF75344G3 |
| BUZ346 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRFP064PBF vs BUZ346 |
| IRFP064 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | IRFP064PBF vs IRFP064 |
| HUF75345G3 | Rochester Electronics LLC | Check for Price | 75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | IRFP064PBF vs HUF75345G3 |
| BUZ346S2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRFP064PBF vs BUZ346S2 |
IRFP064PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFP064PBF is -55°C to 175°C.
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To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
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The maximum allowable voltage for the IRFP064PBF is 55V, but it's recommended to operate within the specified maximum voltage rating of 40V to ensure reliability.
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Handle the IRFP064PBF with ESD-protective equipment, and ensure that the device is properly grounded during handling and assembly.
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Store the IRFP064PBF in a dry, cool place, away from direct sunlight, and in its original packaging or anti-static bag.