Part Details for IRFP054 by Vishay Siliconix
Results Overview of IRFP054 by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFP054 Information
IRFP054 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFP054
IRFP054 CAD Models
IRFP054 Part Data Attributes
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IRFP054
Vishay Siliconix
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Datasheet
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IRFP054
Vishay Siliconix
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-247 | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 373 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP054
This table gives cross-reference parts and alternative options found for IRFP054. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP054, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRFP054 | International Rectifier | Check for Price | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | IRFP054 vs IRFP054 |
| BUZ346 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRFP054 vs BUZ346 |
| IRFP064PBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | IRFP054 vs IRFP064PBF |
| IRFP054PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | IRFP054 vs IRFP054PBF |
| IRFP064 | International Rectifier | Check for Price | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | IRFP054 vs IRFP064 |
| IRFP064PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | IRFP054 vs IRFP064PBF |
| BUZ342 | Siemens | Check for Price | Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, | IRFP054 vs BUZ342 |
| HUF75345G3 | Rochester Electronics LLC | Check for Price | 75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | IRFP054 vs HUF75345G3 |
| HUF75344G3_NL | Rochester Electronics LLC | Check for Price | 75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | IRFP054 vs HUF75344G3_NL |
IRFP054 Frequently Asked Questions (FAQ)
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The SOA for the IRFP054 is not explicitly stated in the datasheet, but it can be estimated using the device's thermal resistance, maximum junction temperature, and voltage ratings. A safe operating area can be determined by plotting the device's voltage and current ratings against the thermal resistance and maximum junction temperature.
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To minimize switching losses, ensure the IRFP054 is driven with a high enough gate-source voltage (Vgs) to fully enhance the device. A Vgs of at least 10V is recommended. Additionally, use a low-impedance gate driver and minimize the gate resistance to reduce switching times and losses.
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The maximum allowed di/dt for the IRFP054 is not explicitly stated in the datasheet, but it can be estimated based on the device's internal gate resistance and capacitance. A general rule of thumb is to limit di/dt to 100A/μs or less to prevent excessive voltage spikes and ensure reliable operation.
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To handle the IRFP054's high peak current capability during fault conditions, ensure that the device is properly protected with a suitable fuse or current-limiting circuit. Additionally, design the PCB to handle high currents and minimize the risk of thermal runaway.
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For optimal thermal management, ensure good thermal conduction between the IRFP054 and the heat sink or PCB. Use a thermally conductive interface material and follow good PCB layout practices, such as minimizing thermal resistance and using thermal vias. A heat sink with a thermal resistance of 1°C/W or less is recommended.