Part Details for IRFN250 by TT Electronics Resistors
Results Overview of IRFN250 by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
IRFN250 Information
IRFN250 by TT Electronics Resistors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFN250
IRFN250 CAD Models
IRFN250 Part Data Attributes
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IRFN250
TT Electronics Resistors
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Datasheet
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IRFN250
TT Electronics Resistors
Power Field-Effect Transistor, 22A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TT ELECTRONICS PLC | |
| Package Description | UNCASED CHIP, R-XUUC-N3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUUC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 88 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFN250
This table gives cross-reference parts and alternative options found for IRFN250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFN250SMD-JQR-BR4 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | IRFN250 vs IRFN250SMD-JQR-BR4 |
| IRFN250-JQR-BR4 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 22A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | IRFN250 vs IRFN250-JQR-BR4 |
| IRFM240-QR-BR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 18A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 | IRFN250 vs IRFM240-QR-BR1 |
| IRFN250SMDR4 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | IRFN250 vs IRFN250SMDR4 |
| IRFN240SMD-JQR-BR4 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 13.9A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | IRFN250 vs IRFN240SMD-JQR-BR4 |
| 2N7225D | International Rectifier | Check for Price | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | IRFN250 vs 2N7225D |
| IRFM240PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | IRFN250 vs IRFM240PBF |
| 2N7225U1-JQR-B | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | IRFN250 vs 2N7225U1-JQR-B |
| IRFN250SMDR4 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | IRFN250 vs IRFN250SMDR4 |
| IRFN240PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | IRFN250 vs IRFN240PBF |