Part Details for IRFN150R4 by TT Electronics Power and Hybrid / Semelab Limited
Results Overview of IRFN150R4 by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRFN150R4 Information
IRFN150R4 by TT Electronics Power and Hybrid / Semelab Limited is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFN150R4
IRFN150R4 CAD Models
IRFN150R4 Part Data Attributes
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IRFN150R4
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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IRFN150R4
TT Electronics Power and Hybrid / Semelab Limited
27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SEMELAB LTD | |
| Part Package Code | TO-220SM | |
| Package Description | CHIP CARRIER, R-XBCC-N3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 27 A | |
| Drain-source On Resistance-Max | 0.081 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| JESD-609 Code | e4 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 108 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFN150R4
This table gives cross-reference parts and alternative options found for IRFN150R4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN150R4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFN150 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN | IRFN150R4 vs IRFN150 |
| IRFN150SMD-JQR-BR4 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | IRFN150R4 vs IRFN150SMD-JQR-BR4 |
| IRFN150 | International Rectifier | Check for Price | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | IRFN150R4 vs IRFN150 |
| JANTX2N7224U | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, SMD-1, U-PKG-3 | IRFN150R4 vs JANTX2N7224U |
| IRFN150SMD | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 27A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | IRFN150R4 vs IRFN150SMD |
| IRFN150SMDR4 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | IRFN150R4 vs IRFN150SMDR4 |
| JANTXV2N7224U | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | IRFN150R4 vs JANTXV2N7224U |
| IRFN150SMD | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | IRFN150R4 vs IRFN150SMD |
| 2N7224UE3 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, SMD-1, U-PKG-3 | IRFN150R4 vs 2N7224UE3 |
| JANTXV2N7224U | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, SMD-1, U-PKG-3 | IRFN150R4 vs JANTXV2N7224U |