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Part Details for IRFM460 by Infineon Technologies AG
Results Overview of IRFM460 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
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IRFM460 Information
IRFM460 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFM460
IRFM460 CAD Models
IRFM460 Part Data Attributes
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IRFM460
Infineon Technologies AG
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Datasheet
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IRFM460
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, S-MSFM-P3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 1200 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.31 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | S-MSFM-P3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 76 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFM460
This table gives cross-reference parts and alternative options found for IRFM460. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM460, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRFM460-JQR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 19A, 500V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN | IRFM460 vs IRFM460-JQR-B |
IRFM460 Frequently Asked Questions (FAQ)
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The IRFM460 is designed to operate up to 1 MHz, but it can be used at higher frequencies with reduced performance.
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Proper thermal management is crucial for the IRFM460. Ensure good thermal contact between the device and a heat sink, and consider using a thermal interface material to reduce thermal resistance.
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The recommended gate drive voltage for the IRFM460 is between 10V and 15V, with a maximum of 20V. However, the optimal voltage may vary depending on the specific application and requirements.
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Yes, the IRFM460 can be used in a synchronous rectification topology, but it requires careful design and layout consideration to ensure proper operation and minimize losses.
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Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the IRFM460. Consider using a dedicated IC or a discrete component solution for OVP and OCP.