Part Details for IRFM250U by International Rectifier
Results Overview of IRFM250U by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRFM250U Information
IRFM250U by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFM250U
IRFM250U CAD Models
IRFM250U Part Data Attributes
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IRFM250U
International Rectifier
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Datasheet
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IRFM250U
International Rectifier
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-254AA | |
| Package Description | FLANGE MOUNT, R-MSFM-P3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 27.4 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | R-MSFM-P3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 300 ns | |
| Turn-on Time-Max (ton) | 225 ns |
Alternate Parts for IRFM250U
This table gives cross-reference parts and alternative options found for IRFM250U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM250U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFN250R4 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 22A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET | IRFM250U vs IRFN250R4 |
| 2N7225SMD-JQR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN | IRFM250U vs 2N7225SMD-JQR-B |
| JANTX2N7225U | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | IRFM250U vs JANTX2N7225U |
| IRFM250R1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN | IRFM250U vs IRFM250R1 |
| JANHCA2N7219 | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | IRFM250U vs JANHCA2N7219 |
| IRFN250 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 22A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | IRFM250U vs IRFN250 |
| IRFM250 | Temic Semiconductors | Check for Price | Power Field-Effect Transistor, 28A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | IRFM250U vs IRFM250 |
| IRFM240UPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | IRFM250U vs IRFM240UPBF |
| 2N7219 | Sensitron Semiconductors | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN | IRFM250U vs 2N7219 |
| SHD2183S | Sensitron Semiconductors | Check for Price | Power Field-Effect Transistor, 30A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-5, 3 PIN | IRFM250U vs SHD2183S |