Datasheets
IRFL210 by:

Small Signal Field-Effect Transistor, 0.96A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Part Details for IRFL210 by Vishay Siliconix

Results Overview of IRFL210 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

IRFL210 Information

IRFL210 by Vishay Siliconix is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFL210

Part # Distributor Description Stock Price Buy
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,960MA I(D),TO-261AA 3760
  • 1 $1.4700
  • 1,362 $0.5145
  • 2,916 $0.4410
$0.4410 / $1.4700 Buy Now

Part Details for IRFL210

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IRFL210 Part Data Attributes

IRFL210 Vishay Siliconix
Buy Now Datasheet
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IRFL210 Vishay Siliconix Small Signal Field-Effect Transistor, 0.96A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT-223
Package Description SOT-223, 3 PIN
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.96 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL210

This table gives cross-reference parts and alternative options found for IRFL210. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL210, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFL210TRPBF Vishay Intertechnologies $0.5278 Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 IRFL210 vs IRFL210TRPBF
Part Number Manufacturer Composite Price Description Compare
FQT4N20LTF onsemi $0.3625 Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 0.85 A, 1.4 Ω, SOT-223, SOT-223-4 / TO-261-4, 4000-REEL IRFL210 vs FQT4N20LTF
STN1NF20 STMicroelectronics $0.5602 N-channel 200 V, 1.1 Ohm, 1 A STripFET(TM) II Power MOSFET in SOT-223 package IRFL210 vs STN1NF20
IRFL210TRPBF-BE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN IRFL210 vs IRFL210TRPBF-BE3
IRFL210TR Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 3 PIN IRFL210 vs IRFL210TR
SIHFL210TR-GE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN IRFL210 vs SIHFL210TR-GE3
FQT4N20LTF Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRFL210 vs FQT4N20LTF
IRFM220B Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 1.13A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN IRFL210 vs IRFM220B
FQT4N20L Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IRFL210 vs FQT4N20L
IRFL210PBF International Rectifier Check for Price Small Signal Field-Effect Transistor, 0.96A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 IRFL210 vs IRFL210PBF
FQT4N20 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IRFL210 vs FQT4N20

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