Part Details for IRFI540N by International Rectifier
Results Overview of IRFI540N by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFI540N Information
IRFI540N by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFI540N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 700 |
|
RFQ | ||
|
|
Bristol Electronics | 140 |
|
RFQ | ||
|
|
Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,18A I(D),SOT-186 | 291 |
|
$3.2670 / $5.9400 | Buy Now |
|
|
ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Not Compliant |
|
|
RFQ |
Part Details for IRFI540N
IRFI540N CAD Models
IRFI540N Part Data Attributes
|
|
IRFI540N
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRFI540N
International Rectifier
Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFI540N
This table gives cross-reference parts and alternative options found for IRFI540N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFI540N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFI540NPBF | Infineon Technologies AG | $0.9861 | Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRFI540N vs IRFI540NPBF |
| IRFI540NPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 | IRFI540N vs IRFI540NPBF |
| IRFI540N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRFI540N vs IRFI540N |
IRFI540N Frequently Asked Questions (FAQ)
-
The IRFI540N can operate safely between -55°C to 175°C, but the maximum junction temperature (TJ) should not exceed 175°C.
-
Power dissipation (PD) can be calculated using the formula: PD = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
-
The recommended gate drive voltage for the IRFI540N is between 10V to 15V, with a maximum gate-source voltage (Vgs) of ±20V.
-
Yes, the IRFI540N is suitable for high-frequency switching applications up to 1MHz, but the user should ensure that the device is properly cooled and the maximum junction temperature is not exceeded.
-
To protect the IRFI540N from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the maximum voltage, and add a current sense resistor or a fuse to detect and limit excessive current.