Part Details for IRFHM9331TRPBF by International Rectifier
Results Overview of IRFHM9331TRPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFHM9331TRPBF Information
IRFHM9331TRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFHM9331TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 1 |
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RFQ | ||
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Vyrian | Transistors | 6899 |
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RFQ |
Part Details for IRFHM9331TRPBF
IRFHM9331TRPBF CAD Models
IRFHM9331TRPBF Part Data Attributes
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IRFHM9331TRPBF
International Rectifier
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Datasheet
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IRFHM9331TRPBF
International Rectifier
Power Field-Effect Transistor, 11A I(D), 30V, 0.0146ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | QFN | |
| Package Description | 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 76 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.0146 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.8 W | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFHM9331TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFHM9331TRPBF is -55°C to 150°C.
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The IRFHM9331TRPBF is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.
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The maximum current rating for the IRFHM9331TRPBF is 110A.
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The IRFHM9331TRPBF is an N-channel MOSFET.
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The typical rise time and fall time for the IRFHM9331TRPBF are 10ns and 20ns, respectively.