Datasheets
IRFHM9331TRPBF by:

Power Field-Effect Transistor, 11A I(D), 30V, 0.0146ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

Part Details for IRFHM9331TRPBF by Infineon Technologies AG

Results Overview of IRFHM9331TRPBF by Infineon Technologies AG

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IRFHM9331TRPBF Information

IRFHM9331TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFHM9331TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 39AH8935
Newark Mosfet, P-Ch, 30V, 24A, Pqfn, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:24A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:1.8V, Qualification:-Rohs Compliant: Yes |Infineon IRFHM9331TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 717
  • 1 $0.2110
  • 10 $0.2110
  • 25 $0.2110
  • 50 $0.2110
  • 100 $0.2110
  • 250 $0.2110
  • 500 $0.2110
  • 1,000 $0.2110
$0.2110 Buy Now
DISTI # 86AK7459
Newark Mosfet, P-Ch, 30V, 11A, Pqfn Rohs Compliant: Yes |Infineon IRFHM9331TRPBF RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 4,000 $0.2430
  • 8,000 $0.2290
$0.2290 / $0.2430 Buy Now
DISTI # IRFHM9331TRPBFCT-ND
DigiKey MOSFET P-CH 30V 11A/24A PQFN Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 7554
In Stock
  • 1 $0.7700
  • 10 $0.5530
  • 100 $0.4074
  • 500 $0.3139
  • 1,000 $0.2862
  • 2,000 $0.2607
  • 4,000 $0.2393
  • 8,000 $0.2328
  • 12,000 $0.2120
  • 20,000 $0.2028
$0.2028 / $0.7700 Buy Now
DISTI # 39AH8935
Avnet Americas Power MOSFET, P Channel, 30 V, 11 A, 0.01 ohm, PQFN, Surface Mount - Product that comes on tape, but is not reeled (Alt: 39AH8935) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 717 Partner Stock
  • 1 $0.6450
  • 10 $0.5830
  • 25 $0.5310
  • 50 $0.4800
  • 100 $0.4280
$0.4280 / $0.6450 Buy Now
DISTI # IRFHM9331TRPBF
Avnet Americas Power MOSFET, P Channel, 30 V, 11 A, 0.01 ohm, PQFN, Surface Mount - Tape and Reel (Alt: IRFHM9331TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.1644
  • 8,000 $0.1625
  • 16,000 $0.1604
  • 24,000 $0.1585
  • 32,000 $0.1563
$0.1563 / $0.1644 Buy Now
DISTI # 942-IRFHM9331TRPBF
Mouser Electronics MOSFETs 1 P-CH -30V HEXFET 14.6mOhms 16nC RoHS: Compliant 5379
  • 1 $0.7100
  • 10 $0.5150
  • 25 $0.4590
  • 100 $0.3880
  • 250 $0.3730
  • 500 $0.3040
  • 1,000 $0.2870
  • 2,000 $0.2610
  • 4,000 $0.2390
$0.2390 / $0.7100 Buy Now
DISTI # E02:0323_02310744
Arrow Electronics Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Date Code: 2512 Europe - 4000
  • 4,000 $0.1744
  • 8,000 $0.1726
$0.1726 / $0.1744 Buy Now
DISTI # V72:2272_13890767
Arrow Electronics Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2305 Container: Cut Strips Americas - 60
  • 1 $0.3308
  • 10 $0.2933
  • 25 $0.1879
$0.1879 / $0.3308 Buy Now
DISTI # 70019301
RS IRFHM9331TRPBF P-channel MOSFET Transistor, 11 A, 30 V, 8-Pin PQFN Min Qty: 5 Package Multiple: 1 Container: Bulk 0
  • 5 $0.6600
  • 50 $0.6300
  • 250 $0.6000
  • 500 $0.5700
$0.5700 / $0.6600 RFQ
Future Electronics Single P-Channel 30 V 14.6 mOhm 32 nC HEXFET® Power Mosfet - PQFN 3 x 3 mm RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Container: Reel 20000
Reel
  • 4,000 $0.1720
  • 8,000 $0.1700
  • 12,000 $0.1690
  • 16,000 $0.1680
  • 20,000 $0.1650
$0.1650 / $0.1720 Buy Now
Future Electronics Single P-Channel 30 V 14.6 mOhm 32 nC HEXFET® Power Mosfet - PQFN 3 x 3 mm RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Container: Reel 0
Reel
  • 4,000 $0.1720
  • 8,000 $0.1700
  • 12,000 $0.1690
  • 16,000 $0.1680
  • 20,000 $0.1650
$0.1650 / $0.1720 Buy Now
DISTI # 88137975
Verical Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Date Code: 2512 Americas - 4000
  • 4,000 $0.1722
$0.1722 Buy Now
DISTI # 75723873
Verical Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R RoHS: Compliant Min Qty: 127 Package Multiple: 1 Date Code: 2339 Americas - 1815
  • 127 $0.3070
  • 200 $0.2360
  • 500 $0.2350
  • 1,000 $0.2340
$0.2340 / $0.3070 Buy Now
DISTI # 86233849
Verical Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R RoHS: Compliant Min Qty: 237 Package Multiple: 1 Americas - 717
  • 237 $0.3446
  • 250 $0.3307
  • 500 $0.3188
$0.3188 / $0.3446 Buy Now
DISTI # 66682719
Verical Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R RoHS: Compliant Min Qty: 34 Package Multiple: 1 Date Code: 2305 Americas - 60
  • 34 $0.1879
$0.1879 Buy Now
Future Electronics Single P-Channel 30 V 14.6 mOhm 32 nC HEXFET� Power Mosfet - PQFN 3 x 3 mm Min Qty: 4000 Package Multiple: 4000 20000
null
  • 4,000 $0.1720
  • 8,000 $0.1700
  • 12,000 $0.1690
  • 16,000 $0.1680
  • 20,000 $0.1650
$0.1650 / $0.1720 Buy Now
DISTI # IRFHM9331TRPBF
TME Transistor: P-MOSFET, unipolar, -30V, -9A, 2.8W, PQFN3.3X3.3 Min Qty: 1 1
  • 1 $0.6320
  • 10 $0.5290
  • 50 $0.4300
  • 100 $0.3900
  • 500 $0.3140
  • 1,000 $0.2870
  • 2,000 $0.2640
  • 4,000 $0.2420
  • 8,000 $0.2360
$0.2360 / $0.6320 Buy Now
DISTI # TMOSP12180
Rutronik P-CH 30V 24A 14,6mOhm PQFN3X3 RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel Stock DE - 40000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 4,000 $0.2453
  • 8,000 $0.2313
  • 12,000 $0.2172
  • 16,000 $0.1962
  • 24,000 $0.1892
$0.1892 / $0.2453 Buy Now
DISTI # IRFHM9331TRPBF
Chip One Stop Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape 1815
  • 5 $0.3070
  • 50 $0.2360
  • 200 $0.2350
  • 500 $0.2340
  • 1,000 $0.2290
  • 32,000 $0.2040
$0.2040 / $0.3070 Buy Now
DISTI # SP001556510
EBV Elektronik Power MOSFET P Channel 30 V 11 A 001 ohm PQFN Surface Mount (Alt: SP001556510) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 11A 2.8W 14.6m10V11A 1.3V 1 piece P-channel PQFN(3x3) MOSFETs ROHS 272
  • 1 $0.5055
  • 10 $0.4074
  • 30 $0.3576
  • 100 $0.3078
  • 500 $0.2792
  • 1,000 $0.2626
$0.2626 / $0.5055 Buy Now
Win Source Electronics MOSFET P-CH 30V 11A 8-PQFN 109900
  • 115 $0.5183
  • 240 $0.4849
  • 375 $0.4682
  • 535 $0.4347
  • 695 $0.4180
  • 865 $0.4012
$0.4012 / $0.5183 Buy Now

Part Details for IRFHM9331TRPBF

IRFHM9331TRPBF CAD Models

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IRFHM9331TRPBF Part Data Attributes

IRFHM9331TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFHM9331TRPBF Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 30V, 0.0146ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description QFN-8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 76 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.0146 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 208 pF
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.8 W
Pulsed Drain Current-Max (IDM) 90 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFHM9331TRPBF

This table gives cross-reference parts and alternative options found for IRFHM9331TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFHM9331TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFHM9331TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 11A I(D), 30V, 0.0146ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 IRFHM9331TRPBF vs IRFHM9331TRPBF

IRFHM9331TRPBF Related Parts

IRFHM9331TRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFHM9331TRPBF is -55°C to 175°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the IRFHM9331TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRFHM9331TRPBF from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and personnel are properly grounded.

  • The maximum allowable power dissipation for the IRFHM9331TRPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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