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Power Field-Effect Transistor, 3.2A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFHM3911TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2577197
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Farnell | MOSFET, N-CH, 100V, 3.2A, PQFN-8 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Cut Tape | 2816 |
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$0.2874 / $0.8741 | Buy Now |
DISTI #
2577197RL
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Farnell | MOSFET, N-CH, 100V, 3.2A, PQFN-8 RoHS: Compliant Min Qty: 100 Lead time: 11 Weeks, 1 Days Container: Reel | 2816 |
|
$0.2874 / $0.5162 | Buy Now |
DISTI #
448-IRFHM3911TRPBFCT-ND
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DigiKey | MOSFET N-CH 100V 3.2A/20A 8PQFN Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5936 In Stock |
|
$0.2114 / $1.0400 | Buy Now |
DISTI #
IRFHM3911TRPBF
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Avnet Americas | Trans MOSFET N-CH 100V 3.2A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM3911TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.1613 / $0.1726 | Buy Now |
DISTI #
942-IRFHM3911TRPBF
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Mouser Electronics | MOSFETs PLANAR 40<-<100V RoHS: Compliant | 8000 |
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$0.2110 / $0.9900 | Buy Now |
DISTI #
V36:1790_13889842
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Arrow Electronics | Trans MOSFET N-CH 100V 3.2A 8-Pin PQFN EP T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks Date Code: 2322 | Americas - 16000 |
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$0.1929 | Buy Now |
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Future Electronics | N-Channel 100 V 3.2A 20 A 2.8W 9W Surface Mount- PQFN-8 (3x3) RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks Container: Reel | 4000Reel |
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$0.1960 / $0.2050 | Buy Now |
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Future Electronics | N-Channel 100 V 3.2A 20 A 2.8W 9W Surface Mount- PQFN-8 (3x3) RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks Container: Reel | 0Reel |
|
$0.1960 / $0.2050 | Buy Now |
DISTI #
88117087
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Verical | Trans MOSFET N-CH 100V 3.2A 8-Pin PQFN EP T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Date Code: 2417 | Americas - 1736000 |
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$0.2268 | Buy Now |
DISTI #
85991881
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Verical | Trans MOSFET N-CH 100V 3.2A 8-Pin PQFN EP T/R RoHS: Compliant Min Qty: 1259 Package Multiple: 1 Date Code: 2201 | Americas - 30715 |
|
$0.2656 / $0.2979 | Buy Now |
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IRFHM3911TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFHM3911TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.2A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | QFN-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 41 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 3.2 A | |
Drain-source On Resistance-Max | 0.115 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 13 pF | |
JESD-30 Code | S-PDSO-F8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 29 W | |
Pulsed Drain Current-Max (IDM) | 36 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFHM3911TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFHM3911TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
AP9997GK | Advanced Power Electronics Corp | Check for Price | TRANSISTOR 3.2 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power | IRFHM3911TRPBF vs AP9997GK |
The maximum operating temperature range for the IRFHM3911TRPBF is -40°C to 150°C.
To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
The recommended gate drive voltage for the IRFHM3911TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
To protect the IRFHM3911TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.
The maximum allowable power dissipation for the IRFHM3911TRPBF is 150W, but this value can be derated based on the operating temperature and other factors.