Part Details for IRFF9120 by International Rectifier
Results Overview of IRFF9120 by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFF9120 Information
IRFF9120 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFF9120
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
V36:1790_15909488
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Arrow Electronics | Trans MOSFET P-CH 100V 4A 3-Pin TO-39 RoHS: Not Compliant Min Qty: 7 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2201 | Americas - 1950 |
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$13.2825 / $13.4895 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 10 |
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$6.0000 / $9.2300 | Buy Now |
Part Details for IRFF9120
IRFF9120 CAD Models
IRFF9120 Part Data Attributes
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IRFF9120
International Rectifier
Buy Now
Datasheet
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IRFF9120
International Rectifier
Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | HERMETIC SEALED, TO-39, 3 PIN | |
| Reach Compliance Code | compliant | |
| Avalanche Energy Rating (Eas) | 115 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.69 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 20 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 120 ns | |
| Turn-on Time-Max (ton) | 160 ns |
IRFF9120 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF9120 is -55°C to 175°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 100V, depending on the application.
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The maximum continuous drain current (Id) for the IRF9120 is 12A, and the maximum pulsed drain current is 36A.
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To protect the IRF9120, use a voltage regulator or a zener diode to limit the voltage, and consider adding a current-sensing resistor and a fuse or a current limiter to prevent overcurrent.
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Yes, the IRF9120 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper layout and decoupling to minimize parasitic inductance and capacitance.