Part Details for IRFF230-JQR-BR1 by TT Electronics Power and Hybrid / Semelab Limited
Results Overview of IRFF230-JQR-BR1 by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFF230-JQR-BR1 Information
IRFF230-JQR-BR1 by TT Electronics Power and Hybrid / Semelab Limited is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFF230-JQR-BR1
IRFF230-JQR-BR1 CAD Models
IRFF230-JQR-BR1 Part Data Attributes
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IRFF230-JQR-BR1
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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IRFF230-JQR-BR1
TT Electronics Power and Hybrid / Semelab Limited
5.5A, 200V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SEMELAB LTD | |
| Part Package Code | BCY | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFF230-JQR-BR1
This table gives cross-reference parts and alternative options found for IRFF230-JQR-BR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF230-JQR-BR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFF230 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | IRFF230-JQR-BR1 vs IRFF230 |
| JAN2N6798 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | IRFF230-JQR-BR1 vs JAN2N6798 |
| JANTXV2N6798 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | IRFF230-JQR-BR1 vs JANTXV2N6798 |
| 2N6798 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | IRFF230-JQR-BR1 vs 2N6798 |
| IRFF230 | Thomson Consumer Electronics | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRFF230-JQR-BR1 vs IRFF230 |
| IRFF230PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | IRFF230-JQR-BR1 vs IRFF230PBF |
| JAN2N6798 | Microsemi Corporation | Check for Price | Small Signal Field-Effect Transistor, 5.5A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | IRFF230-JQR-BR1 vs JAN2N6798 |