Part Details for IRFF130 by Vishay Siliconix
Results Overview of IRFF130 by Vishay Siliconix
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IRFF130 Information
IRFF130 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFF130
IRFF130 CAD Models
IRFF130 Part Data Attributes
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IRFF130
Vishay Siliconix
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Datasheet
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IRFF130
Vishay Siliconix
Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET,
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Reach Compliance Code | unknown | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 8 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
IRFF130 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF130 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
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The thermal resistance of the IRF130 depends on the specific application, including the PCB layout, heat sink, and ambient temperature. To calculate the thermal resistance, you can use the thermal resistance values provided in the datasheet (e.g., RθJA and RθJC) and adjust them based on your specific application using thermal simulation tools or empirical formulas.
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The recommended gate drive voltage for the IRF130 is typically between 10V and 15V, depending on the specific application and required switching speed. However, it's essential to ensure that the gate drive voltage does not exceed the maximum gate-source voltage rating (VGS) of ±20V to prevent damage to the device.
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The IRF130 is a relatively slow-switching MOSFET with a typical rise time (tr) of 20ns and fall time (tf) of 30ns. While it can be used in high-frequency switching applications, it may not be the best choice due to its relatively high switching losses. For high-frequency applications, consider using a faster-switching MOSFET with lower switching losses.
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To ensure the IRF130 is fully turned on, you should provide a sufficient gate drive voltage (VGS) and current (IGS) to the device. The recommended gate drive voltage is typically between 10V and 15V, and the gate current should be sufficient to charge the gate capacitance (CGS) quickly. Additionally, ensure that the drain-source voltage (VDS) is within the recommended operating range.