Part Details for IRFF130 by New Jersey Semiconductor Products Inc
Results Overview of IRFF130 by New Jersey Semiconductor Products Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFF130 Information
IRFF130 by New Jersey Semiconductor Products Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFF130
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,8A I(D),TO-205AF | 280 |
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$17.6000 / $20.8000 | Buy Now |
Part Details for IRFF130
IRFF130 CAD Models
IRFF130 Part Data Attributes
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IRFF130
New Jersey Semiconductor Products Inc
Buy Now
Datasheet
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IRFF130
New Jersey Semiconductor Products Inc
Trans MOSFET N-CH 100V 8A 3-Pin TO-39
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Element Material | SILICON |
IRFF130 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF530 is typically defined by the manufacturer as the maximum voltage and current ratings, which are 100V and 14A respectively. However, it's recommended to derate the device to ensure reliable operation.
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The junction-to-case thermal resistance (RθJC) for the IRF530 can be calculated using the formula: RθJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. The datasheet provides a typical value of 1.5°C/W for RθJC.
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The recommended gate drive voltage for the IRF530 is typically between 10V to 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
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To ensure the IRF530 is properly biased for linear operation, the gate-source voltage (VGS) should be set to a value that allows the device to operate in the linear region. A typical VGS for linear operation is around 4-5V, but this may vary depending on the specific application and required linearity.
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The maximum allowed drain-source voltage (VDS) for the IRF530 is 100V. Exceeding this voltage can cause permanent damage to the device.