Part Details for IRFF120 by International Rectifier
Results Overview of IRFF120 by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFF120 Information
IRFF120 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFF120
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,6A I(D),TO-205AF | 1 |
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$12.6527 | Buy Now |
Part Details for IRFF120
IRFF120 CAD Models
IRFF120 Part Data Attributes
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IRFF120
International Rectifier
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Datasheet
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IRFF120
International Rectifier
Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | HERMETIC SEALED, MODIFIED TO-39, 3 PIN | |
| Reach Compliance Code | compliant | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 0.242 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 20 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 110 ns | |
| Turn-on Time-Max (ton) | 110 ns |
IRFF120 Frequently Asked Questions (FAQ)
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The maximum SOA for the IRF120 is typically defined by the voltage and current ratings. The device can handle up to 100V and 20A, but the SOA curve in the datasheet provides more detailed information on the safe operating region.
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To ensure the IRF120 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive should be able to provide sufficient current to charge the gate capacitance quickly.
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The thermal resistance (RθJA) of the IRF120 is typically around 62°C/W, which means that for every watt of power dissipation, the junction temperature will increase by 62°C above the ambient temperature.
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Yes, the IRF120 can be used in high-frequency switching applications, but the gate drive and layout should be optimized to minimize switching losses and ringing. The device has a relatively low gate charge (Qg) and a fast switching time (tr and tf).
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To protect the IRF120 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and a current sense resistor or a fuse to detect and respond to overcurrent conditions.