Part Details for IRFF120-JQR-B by TT Electronics Resistors
Results Overview of IRFF120-JQR-B by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFF120-JQR-B Information
IRFF120-JQR-B by TT Electronics Resistors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFF120-JQR-B
IRFF120-JQR-B CAD Models
IRFF120-JQR-B Part Data Attributes
|
|
IRFF120-JQR-B
TT Electronics Resistors
Buy Now
Datasheet
|
Compare Parts:
IRFF120-JQR-B
TT Electronics Resistors
Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TT ELECTRONICS PLC | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.345 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFF120-JQR-B
This table gives cross-reference parts and alternative options found for IRFF120-JQR-B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF120-JQR-B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N6788 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, FORMERLY TO-39, 3 PIN | IRFF120-JQR-B vs 2N6788 |
| JANTXV2N6788 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN | IRFF120-JQR-B vs JANTXV2N6788 |
| JANTXV2N6788 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | IRFF120-JQR-B vs JANTXV2N6788 |
| JANTXV2N6788 | Intersil Corporation | Check for Price | 6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | IRFF120-JQR-B vs JANTXV2N6788 |
| 2N6788.MOD | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | IRFF120-JQR-B vs 2N6788.MOD |
| 2N6788-QR-BR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 6A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | IRFF120-JQR-B vs 2N6788-QR-BR1 |
| 2N6788 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | IRFF120-JQR-B vs 2N6788 |
| 2N6788.MODR1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | IRFF120-JQR-B vs 2N6788.MODR1 |