Part Details for IRFD9110 by Harris Semiconductor
Results Overview of IRFD9110 by Harris Semiconductor
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFD9110 Information
IRFD9110 by Harris Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFD9110
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2156-IRFD9110-ND
|
DigiKey | 0.7A 100V 1.200 OHM P-CHANNEL Min Qty: 662 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
15652 In Stock |
|
$0.4500 | Buy Now |
|
DISTI #
87279944
|
Verical | IRFD9110 Min Qty: 689 Package Multiple: 1 Date Code: 9801 | Americas - 8000 |
|
$0.5450 | Buy Now |
|
DISTI #
87279473
|
Verical | IRFD9110 Min Qty: 689 Package Multiple: 1 Date Code: 9901 | Americas - 4035 |
|
$0.5450 | Buy Now |
|
DISTI #
87279418
|
Verical | IRFD9110 Min Qty: 689 Package Multiple: 1 | Americas - 3617 |
|
$0.5450 | Buy Now |
|
|
Quest Components | TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,700MA I(D),TO-250VAR | 513 |
|
$2.5245 / $4.5900 | Buy Now |
|
|
Quest Components | TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,700MA I(D),TO-250VAR | 6 |
|
$3.0600 / $4.5900 | Buy Now |
|
|
Rochester Electronics | 0.7A, 100V, 1.200 OHM, P-Channel POWER MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 15652 |
|
$0.2703 / $0.4360 | Buy Now |
Part Details for IRFD9110
IRFD9110 CAD Models
IRFD9110 Part Data Attributes
|
|
IRFD9110
Harris Semiconductor
Buy Now
Datasheet
|
Compare Parts:
IRFD9110
Harris Semiconductor
Small Signal Field-Effect Transistor, 0.7A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.7 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFD9110 Frequently Asked Questions (FAQ)
-
The maximum safe operating area (SOA) for the IRFD9110 is not explicitly stated in the datasheet, but it can be determined by consulting the SOA curves provided in the application notes or by contacting Harris Semiconductor's technical support.
-
To ensure proper biasing, follow the recommended biasing circuit and voltage levels outlined in the datasheet and application notes. Additionally, consider the device's threshold voltage, gate-source voltage, and drain-source voltage when designing the biasing circuit.
-
To minimize parasitic inductance and capacitance, follow good PCB design practices such as using a ground plane, minimizing lead lengths, and placing decoupling capacitors close to the device. Consult the application notes and Harris Semiconductor's PCB design guidelines for more specific recommendations.
-
To protect the IRFD9110 from ESD and overvoltage, use ESD protection devices such as TVS diodes or zener diodes, and ensure that the device is operated within its recommended voltage ratings. Follow proper handling and storage procedures to prevent ESD damage.
-
To ensure proper heat dissipation, follow the recommended thermal management guidelines outlined in the datasheet and application notes. This includes using a heat sink, thermal interface material, and ensuring good airflow around the device. Consult Harris Semiconductor's thermal management guidelines for more specific recommendations.